Blue luminescence from Si+-implanted SiO2 films thermally grown on crystalline silicon

Liao, Liang‐Sheng; Bao, Xuewei; Zheng, Xuemei; Li, Ning‐Sheng; Nai-Ben, Min

doi:10.1063/1.116554

Cited by 236 publications

(114 citation statements)

References 16 publications

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“…Blue luminescence was also observed in Si + -implanted SiO 2 films peaking at around 2.7 eV, which was believed to be due to oxygen vavancy. 61 It is therefore reasonable for us to believe that the very intensive blue light emission from the SiO 2 nanotubes can be attributed to the abovementioned defect centers arising from the oxygen deficiency.…”

Section: Cathodoluminescence (Cl)mentioning

confidence: 99%

Synthesis and Cathodoluminescence of Morphology-Tunable SiO₂ Nanotubes and ZnS/SiO₂ Core−Shell Structures Using CdSe Nanocrystals as the Seeds

Zhai

Dong

et al. 2007

J. Phys. Chem. C

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High-density, ultralong SiO 2 nanotubes were successfully synthesized by a one-step thermal evaporation process using CdSe nanocrystals as the seeds. The as-synthesized products were characterized using X-ray diffraction, scanning electron microscopy, transmission electron microscopy, energy-dispersive X-ray spectrometry, and cathodoluminescence. Varying experimental parameters results in the formation of additional SiO 2 -based nanostructures, such as flowerlike SiO 2 nanotubes and ZnS/SiO 2 core-shell structures. On the basis of these observations, a template-based growth mechanism was proposed for the growth of these nanostructures. Furthermore, the stable and strong visible-light emission properties are of significant interest for their potential applications in future integrated devices.

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Section: Cathodoluminescence (Cl)mentioning

confidence: 99%

Synthesis and Cathodoluminescence of Morphology-Tunable SiO₂ Nanotubes and ZnS/SiO₂ Core−Shell Structures Using CdSe Nanocrystals as the Seeds

Zhai

Dong

et al. 2007

J. Phys. Chem. C

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“…7 Zacharias and Fauchet 3 argued that ∼400 nm blue luminescence must be related to the formation of Ge or GeO 2 nanocrystals in the oxide matrix and they suggested that defects at the NC/matrix interface is responsible for the emission. On the other hand, Liao et al 8 and Feinardi and Paleari 9 observed violet PL in SiO 2 samples that does not contain Ge atoms and the violet emission was attributed to oxygen deficient defects in SiO 2 . Violet luminescence in Ge nanocrystals/Ge oxide structures formed by dry oxidation of polycrystalline SiGe has been attributed to defects at the NC Ge/GeO 2 interface.…”

Section: Introductionmentioning

confidence: 99%

Intense Ultraviolet-Blue Photoluminescence from SiO₂ Embedded Ge Nanocrystals Prepared by Different Techniques

Giri¹,

Bhattacharyya²,

Kesavamoorthy³

et al. 2009

j nanosci nanotechnol

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We have made systematic studies on the ultraviolet-blue photoluminescence (PL) from Ge nanocrystals (NCs) grown embedded in SiO 2 matrix. Embedded Ge NCs are grown by two different methods, namely, radio-frequency magnetron sputtering (SPT) and ion implantation (IMP). For comparison, Ar implanted SiO 2 layer was processed similarly and studied to isolate the contribution of Ge atoms in the observed PL. X-ray diffraction, optical Raman and low frequency Raman scattering studies confirm the presence of Ge NCs in samples prepared by SPT and IMP methods and Si nanoclusters in Ar implanted sample. Room temperature PL studies with 325 nm excitation show very strong UV-blue emission bands in the range 342-420 nm, and PL studies with 246 nm excitation show two strong UV emission bands at ∼285 nm and ∼393 nm in implanted samples. Deconvolution of UV-blue bands show that most of the emission peaks are not unique to the presence of Ge in the samples. Time resolved PL studies in the blue wavelength region show a fast decay dynamics (time constant of ∼1.0 ns), irrespective of the NC size. PL excitation spectroscopy measurements show a large Stoke's shift for the UV emission bands. Our results indicate that contrary to the literature reports, the ∼400 nm PL emission is band is not unique to the presence of Ge in the SiO 2 matrix and it is likely to originate from a defective NC/SiO 2 interface, irrespective of the species of NCs. Origin of various UV emission bands is discussed in the light of the experimental findings and literature reports.

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“…Amorphous silica as an important optical candidate material has been investigated for a long time, due to its unique physical and chemical stability and efficient photoluminescence emission [1]. Especially one dimensional silica materials, such as tubes [2], rods [3], wires [4], and fibers [5] have attracted a lot of attentions during the past decades because of their potential wide-ranging applications, for example drug delivery [6], catalysis [7], controlled release [8] and biological filed [9].…”

Section: Introductionmentioning

confidence: 99%

Facile Synthesis and Luminescence Properties of Silica Submicron Rods

Chen¹,

Ye²,

Ju³

et al. 2014

Proceedings of the 2015 International Conference on Material Science and Applications

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Abstract. Silica submicron rods were conveniently synthesized through a simple sol-gel method at room temperature. The SEM images demonstrated that the obtained silica submicron rods had high purity and uniform diameter of about 380-400 nm. The XRD results showed the obtained silica submicron rods were amorphous. Furthermore, the silica submicron rods exhibited blue emission under UV light excitation, which is relevant to the surface-associated defects.

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Blue luminescence from Si+-implanted SiO2 films thermally grown on crystalline silicon

Cited by 236 publications

References 16 publications

Synthesis and Cathodoluminescence of Morphology-Tunable SiO₂ Nanotubes and ZnS/SiO₂ Core−Shell Structures Using CdSe Nanocrystals as the Seeds

Synthesis and Cathodoluminescence of Morphology-Tunable SiO₂ Nanotubes and ZnS/SiO₂ Core−Shell Structures Using CdSe Nanocrystals as the Seeds

Intense Ultraviolet-Blue Photoluminescence from SiO₂ Embedded Ge Nanocrystals Prepared by Different Techniques

Facile Synthesis and Luminescence Properties of Silica Submicron Rods

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Blue luminescence from Si+-implanted SiO2 films thermally grown on crystalline silicon

Cited by 236 publications

References 16 publications

Synthesis and Cathodoluminescence of Morphology-Tunable SiO2 Nanotubes and ZnS/SiO2 Core−Shell Structures Using CdSe Nanocrystals as the Seeds

Synthesis and Cathodoluminescence of Morphology-Tunable SiO2 Nanotubes and ZnS/SiO2 Core−Shell Structures Using CdSe Nanocrystals as the Seeds

Intense Ultraviolet-Blue Photoluminescence from SiO2 Embedded Ge Nanocrystals Prepared by Different Techniques

Facile Synthesis and Luminescence Properties of Silica Submicron Rods

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Synthesis and Cathodoluminescence of Morphology-Tunable SiO₂ Nanotubes and ZnS/SiO₂ Core−Shell Structures Using CdSe Nanocrystals as the Seeds

Synthesis and Cathodoluminescence of Morphology-Tunable SiO₂ Nanotubes and ZnS/SiO₂ Core−Shell Structures Using CdSe Nanocrystals as the Seeds

Intense Ultraviolet-Blue Photoluminescence from SiO₂ Embedded Ge Nanocrystals Prepared by Different Techniques