Blue-photon modification of nonstandard diode barrier in CuInSe2 solar cells

Eisgruber, I.L.; Granata, J.; Sites, James R.; Hou, J. Y.; Keßler, J.

doi:10.1016/s0927-0248(98)00035-x

Cited by 132 publications

(92 citation statements)

References 10 publications

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“…21 Alternatively, the negative charge of compensating acceptors in the buffer layer may result in an S-like I-V characteristic. 22 Some factors that were experimentally specified to develop transient effects are the surface oxidation of the CIGS layer in air (a), the deposition of the CBD ZnS layer (b), and sputtering of the Zn 1-x Mg x O layer (c):…”

Section: Reasons For Transient Behaviormentioning

confidence: 99%

The Zn(S,O,OH)/ZnMgO buffer in thin‐film Cu(In,Ga)(Se,S)₂‐based solar cells part II: Magnetron sputtering of the ZnMgO buffer layer for in‐line co‐evaporated Cu(In,Ga)Se₂ solar cells

Hariskos

Fuchs

Menner

et al. 2009

Progress in Photovoltaics

114

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) ratio in the target was varied between x ¼ 0Á0 and 0Á4. The composition, the crystal structure, and the optical properties of the resulting layers were analyzed. Small laboratory cells and 10 T 10 cm 2 modules were realized with high reproducibility and enhanced stability. The transmission is improved in the wavelength region between 330 and 550 nm for the ZnS/Zn 1-x Mg x O layers. Therefore, a large gain in the short-circuit current density up to 12% was obtained, which resulted in higher conversion efficiencies up to 9% relative as compared to cells with the CdS/i-ZnO buffer system. Peak efficiencies of 18% with small laboratory cells and 15Á2% with 10 T 10 cm 2 mini-modules were demonstrated.

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Section: Reasons For Transient Behaviormentioning

confidence: 99%

The Zn(S,O,OH)/ZnMgO buffer in thin‐film Cu(In,Ga)(Se,S)₂‐based solar cells part II: Magnetron sputtering of the ZnMgO buffer layer for in‐line co‐evaporated Cu(In,Ga)Se₂ solar cells

Hariskos

Fuchs

Menner

et al. 2009

Progress in Photovoltaics

114

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“…Impurities can compensate the doping in CdS and act as carrier traps, turning the CdS into a transport barrier modulated by light. This mechanism has already been investigated for CIGS cells, 48 and adapted models have been developed for CdTe cells. 49 Hence, not only the direct influence of the front contact, but its indirect influence on the electrical properties of the CdS by interdiffusion of impurities across the TCO/ CdS interface should be considered in terms of cell stability.…”

Section: Cdte Solar Cellsmentioning

confidence: 99%

Development of thin‐film Cu(In,Ga)Se₂and CdTe solar cells

Romeo¹,

Terheggen²,

Abou‐Ras³

et al. 2004

Progress in Photovoltaics

358

192

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Cu(In,Ga)Se2 and CdTe heterojunction solar cells grown on rigid (glass) or flexible foil substrates require p‐type absorber layers of optimum optoelectronic properties and n‐type wide‐bandgap partner layers to form the p–n junction. Transparent conducting oxide and specific metal layers are used for front and back electrical contacts. Efficiencies of solar cells depend on various deposition methods as they control the optoelectronic properties of the layers and interfaces. Certain treatments, such as addition of Na in Cu(In,Ga)Se2 and CdCl2 treatment of CdTe have a direct influence on the electronic properties of the absorber layers and efficiency of solar cells. Processes for the development of superstrate and substrate solar cells are reviewed. Copyright © 2004 John Wiley & Sons, Ltd.

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“…[2][3][4] In EBIC, a significant decrease of the short circuit current was observed for electron beam irradiation in the absorber bulk without generation in the heterojunction region. 1 In IV analysis, the solar cell current was found to decrease significantly under forward bias, which leads to the typical "kink" shape of the IV curve.…”

Section: Introductionmentioning

confidence: 99%

Generation-dependent charge carrier transport in Cu(In,Ga)Se2/CdS/ZnO thin-film solar-cells

Nichterwitz

Caballero

Kaufmann

et al. 2013

Journal of Applied Physics

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Cross section electron-beam induced current (EBIC) and illumination-dependent current voltage (IV) measurements show that charge carrier transport in Cu(In,Ga)Se2 (CIGSe)/CdS/ZnO solar-cells is generation-dependent. We perform a detailed analysis of CIGSe solar cells with different CdS layer thicknesses and varying Ga-content in the absorber layer. In conjunction with numerical simulations, EBIC and IV data are used to develop a consistent model for charge and defect distributions with a focus on the heterojunction region. The best model to explain our experimental data is based on a p+ layer at the CIGSe/CdS interface leading to generation-dependent transport in EBIC at room temperature. Acceptor-type defect states at the CdS/ZnO interface cause a significant reduction of the photocurrent in the red-light illuminated IV characteristics at low temperatures (red kink effect). Shallow donor-type defect states at the p+ layer/CdS interface of some grains of the absorber layer are responsible for grain specific, i.e., spatially inhomogeneous, charge carrier transport observed in EBIC.

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Blue-photon modification of nonstandard diode barrier in CuInSe2 solar cells

Cited by 132 publications

References 10 publications

The Zn(S,O,OH)/ZnMgO buffer in thin‐film Cu(In,Ga)(Se,S)₂‐based solar cells part II: Magnetron sputtering of the ZnMgO buffer layer for in‐line co‐evaporated Cu(In,Ga)Se₂ solar cells

The Zn(S,O,OH)/ZnMgO buffer in thin‐film Cu(In,Ga)(Se,S)₂‐based solar cells part II: Magnetron sputtering of the ZnMgO buffer layer for in‐line co‐evaporated Cu(In,Ga)Se₂ solar cells

Development of thin‐film Cu(In,Ga)Se₂and CdTe solar cells

Generation-dependent charge carrier transport in Cu(In,Ga)Se2/CdS/ZnO thin-film solar-cells

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Blue-photon modification of nonstandard diode barrier in CuInSe2 solar cells

Cited by 132 publications

References 10 publications

The Zn(S,O,OH)/ZnMgO buffer in thin‐film Cu(In,Ga)(Se,S)2‐based solar cells part II: Magnetron sputtering of the ZnMgO buffer layer for in‐line co‐evaporated Cu(In,Ga)Se2 solar cells

The Zn(S,O,OH)/ZnMgO buffer in thin‐film Cu(In,Ga)(Se,S)2‐based solar cells part II: Magnetron sputtering of the ZnMgO buffer layer for in‐line co‐evaporated Cu(In,Ga)Se2 solar cells

Development of thin‐film Cu(In,Ga)Se2and CdTe solar cells

Generation-dependent charge carrier transport in Cu(In,Ga)Se2/CdS/ZnO thin-film solar-cells

Contact Info

Product

Resources

About

The Zn(S,O,OH)/ZnMgO buffer in thin‐film Cu(In,Ga)(Se,S)₂‐based solar cells part II: Magnetron sputtering of the ZnMgO buffer layer for in‐line co‐evaporated Cu(In,Ga)Se₂ solar cells

The Zn(S,O,OH)/ZnMgO buffer in thin‐film Cu(In,Ga)(Se,S)₂‐based solar cells part II: Magnetron sputtering of the ZnMgO buffer layer for in‐line co‐evaporated Cu(In,Ga)Se₂ solar cells

Development of thin‐film Cu(In,Ga)Se₂and CdTe solar cells