2011
DOI: 10.4028/www.scientific.net/kem.480-481.629
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Blue Shifting of Hydrogenated Silicon Carbide Multiple Quantum Wells

Abstract: Five-period hydrogenated silicon carbide (SiC) multiple quantum wells with silicon dioxide (SiO2) or silicon nitride (SiN) dielectric that were synthesized by high density plasma chemical vapor deposition were studied using photoluminescence (PL) spectroscopy to understand its blue shift. Rapid thermal annealing induced significant blue shifting in the PL spectra after fluorine ion implantation due to crystallization. The thinning of the SiC causes blue shift due to the quantum confinement effect. The higher P… Show more

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