Measurements are reported of the electrical resistivity of dilute Cr-Si and Cr-Ga alloy single crystals in the temperature range 4 to 1000 K. Analyses of the data show large magnetic contributions to the electrical resistivity of all of the alloys at temperatures 0 < T < 2T N , where T N is the Néel temperature. These magnetic contributions are partly attributed to spin-fluctuation and temperature-dependent resonant impurity scattering effects. A hysteretic resistivity anomaly, ascribed to the effects of mixed incommensurate (I) and commensurate (C) spin-density-wave (SDW) states, was observed near the I-C phase transition temperature of Cr + 1.2 at.% Si. The resistivity of Cr + 0.16 at.% Ga shows a small and unusual anomaly near the spin-flip transition temperature.