2016
DOI: 10.18052/www.scipress.com/ilcpa.66.96
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Body Centered Photonic Crystal

Abstract: ABSTRACT. The photonic energy bands of body centered cubic photonic crystals formed from SiO 2 , GaP, Si, InAs, GaAs, InP, Ge and BaSrTiO 3 dielectric spheres drilled in air and air holes drilled in these dielectric mediums were calculated using the plane wave expansion method. The filling factor for each dielectric material was changed until a complete energy gap was obtained and then the density of states was calculated. There were no complete band gaps for air spheres drilled in these eight dielectric mediu… Show more

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Cited by 2 publications
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“…b in terms of basis vectors i b in the reciprocal space and set of are integers i h leads to the equation [15]:…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…b in terms of basis vectors i b in the reciprocal space and set of are integers i h leads to the equation [15]:…”
Section: Methodsmentioning
confidence: 99%
“…The dielectric contrast of the two mediums play important role in determining the photonic gap. Therefore, the plane wave expansion method developed for bcc [15] lattice applicable to any type of non-dispersive dielectric functions was used as the numerical technique in modeling and simulating the band structures of three dimensional fcc structured photonic crystals formed by dielectrics spheres of Si and Ge of group IV; GaP, InAs, GaAs, InP of group III-V; SiO 2 and BaSrTiO 3 spheres placed in air. Barium-strontium titanate (BaSrTiO 3 ) was selected as it is a favorable electronic material because of its high dielectric constant and variable Curie temperature with composition [16].…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, the plane wave expansion method developed for bcc [15] lattice applicable to any type of non-dispersive dielectric functions was used as the numerical technique in modeling and simulating the band structures of three dimensional fcc structured photonic crystals formed by dielectrics spheres of Si and Ge of group IV; GaP, InAs, GaAs, InP of group III-V; SiO 2 and BaSrTiO 3 spheres placed in air. Barium-strontium titanate (BaSrTiO 3 ) was selected as it is a favorable electronic material because of its high dielectric constant and variable Curie temperature with composition [16].…”
Section: Introductionmentioning
confidence: 99%