ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC) 2021
DOI: 10.1109/esscirc53450.2021.9567745
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Body-Coupled Power Transceiver with Node-Specific Body-Area Powering

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Cited by 10 publications
(3 citation statements)
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“…For higher power delivery over the optimal BCP frequency span (up to 80 MHz [7]), an HV driving stage is designed at the BS TX. Compared with the implementations in the HV or SOI process [28], standard CMOS-compliant designs use the stacked MOS configurations with corresponding biasing techniques to tackle the overstress and gate-oxide reliability issue [22], [29], [30]. Serneels et al [29] and Luo and Ker [30] introduced the self-generated and adaptive gate biasing techniques, respectively.…”
Section: Charge-replenishing High-voltage Drivermentioning
confidence: 99%
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“…For higher power delivery over the optimal BCP frequency span (up to 80 MHz [7]), an HV driving stage is designed at the BS TX. Compared with the implementations in the HV or SOI process [28], standard CMOS-compliant designs use the stacked MOS configurations with corresponding biasing techniques to tackle the overstress and gate-oxide reliability issue [22], [29], [30]. Serneels et al [29] and Luo and Ker [30] introduced the self-generated and adaptive gate biasing techniques, respectively.…”
Section: Charge-replenishing High-voltage Drivermentioning
confidence: 99%
“…However, both biasing techniques consume high static current which increases with the switching speed. Dong et al [22] introduced a four-stage charge-pump-based gate biasing technique, which removes the need for additional biasing circuits, level shifters, and tapered buffers, reducing the power consumption. However, the limited transition speed in [22] not only limits the driver switching frequency but also leads to increased power loss due to the crowbar current at a higher switching frequency.…”
Section: Charge-replenishing High-voltage Drivermentioning
confidence: 99%
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