Body Diode Reliability of Commercial SiC Power MOSFETs

Kang, Minseok; Yu, Susanna; Xing, Diang; Liu, Tianshi; Salemi, Arash; Booth, Kristen; Zhu, Shengnan; White, M.H.; Agarwal, Anant

doi:10.1109/wipda46397.2019.8998940

Cited by 21 publications

(5 citation statements)

References 12 publications

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“…SiC MOSFETs can experience bipolar degradation effects in their body diode under bipolar operating conditions due to pre‐existing basal plane dislocations (BPDs) on SiC crystals. This degradation leads to poor carrier conduction in the on‐state and high leakage current in the off‐state, resulting in unstable operation of inverters and DC/DC converters under low load conditions [70]. Therefore, high demands are placed on the manufacturing process of SiC MOSFETs.…”

Section: Challenges For Sic Mosfet Applications In Electric Vehiclesmentioning

confidence: 99%

A review of silicon carbide MOSFETs in electrified vehicles: Application, challenges, and future development

Shi

Ramones

Liu

et al. 2023

IET Power Electronics

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Compared with silicon‐based Insulated Gate Bipolar Transistors (IGBTs), silicon carbide (SiC) Metal‐Oxide‐Semiconductor Field‐Effect Transistors (MOSFETs) are characterized by higher operating temperatures, switching speeds and switching frequencies, and are considered the next evolutionary step for future electric drives. The application of SiC MOSFETs in the field of electrified vehicles has brought many benefits, such as higher efficiency, higher power density, and simplified cooling system, and can be seen as an enabler for high‐power fast battery charging. This article reviews the benefits of SiC MOSFETs in different electrified vehicle (EV) application scenarios, including traction inverters, on‐board converters, and off‐board charging applications. However, replacing Si‐IGBTs with SiC MOSFETs introduces several new technical challenges, such as stronger electromagnetic interference (EMI), reliability issues, potential electric machine insulation failure due to high transient voltages, and cooling difficulties. Compared to mature silicon‐based semiconductor technologies, these challenges have so far hindered the widespread adoption of SiC MOSFETs in automotive applications. To fully exploit the advantages of SiC MOSFETs in automotive applications and enhance their reliability, this paper explores future technology developments in SiC MOSFET module packaging and driver design, as well as novel electric machine drive strategies with higher switching frequencies, and optimized high‐frequency machine design.

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Section: Challenges For Sic Mosfet Applications In Electric Vehiclesmentioning

confidence: 99%

A review of silicon carbide MOSFETs in electrified vehicles: Application, challenges, and future development

Shi

Ramones

Liu

et al. 2023

IET Power Electronics

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“…The I D -V D characteristics in the third quadrant (Figure 15) and first quadrant (shown in Figure 16) were measured at room temperature as a function of the stress time of the forward-biased body diode. The detailed experimental study can be found in reference [31].…”

Section: Body Diode Reliabilitymentioning

confidence: 99%

The Road to a Robust and Affordable SiC Power MOSFET Technology

Maddi

Zhu

et al. 2021

Energies

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This article provides a detailed study of performance and reliability issues and trade-offs in silicon carbide (SiC) power MOSFETs. The reliability issues such as threshold voltage variation across devices from the same vendor, instability of threshold voltage under positive and negative gate bias, long-term reliability of gate oxide, screening of devices with extrinsic defects by means of gate voltage, body diode degradation, and short circuit withstand time are investigated through testing of commercial devices from different vendors and two-dimensional simulations. Price roadmap and foundry models of SiC MOSFETs are discussed. Future development of mixed-mode CMOS circuits with high voltage lateral MOSFETs along with 4−6× higher power handling capability compared to silicon circuits has been described.

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“…Additionally, using the body diode under specific conditions can result in premature ageing of the device [25], [26].…”

Section: Introductionmentioning

confidence: 99%

Coordinated Online Junction Temperature Estimation of MOSFETs and Antiparallel Diodes in Three-Phase SiC Inverters

Stella,

Pellegrino,

Armando

2023

IEEE J. Emerg. Sel. Topics Power Electron.

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SiC power MOSFETs guarantee high power density and high efficiency in new generation power converters. The precise measurement of the devices junction temperature is important in this context for guaranteeing the reliability of the converter and the full exploitation of power semiconductors. While the use of Temperature Sensitive Electrical Parameters (TSEPs) has proven effective and feasible, their application in realworld power converters remains limited. Besides SiC MOSFETs, the temperature of the antiparallel diode is often overlooked and considered non critical. However, monitoring the temperature of all power electronic devices, diodes included, offers augmented reliability, adaptive adjustment of the converter's peak current at no risk of failure and advanced diagnostics. This paper shows that the on-board measurement of the conduction voltage of the SiC MOSFETs and antiparallel diodes can be used for the direct estimate of the respective junction temperatures in a 3-phase voltage source inverter. The diode temperatures come with no hardware complication, with respect to what is already in place for SiC MOSFETs characterization and estimate. The proposed methodology is validated on a proof-of-concept 2-level 3-phase inverter designed for the Formula SAE student electric competitions, showing the temperature estimate of the six MOSFETs and diodes at overload current operation.

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Body Diode Reliability of Commercial SiC Power MOSFETs

Cited by 21 publications

References 12 publications

A review of silicon carbide MOSFETs in electrified vehicles: Application, challenges, and future development

A review of silicon carbide MOSFETs in electrified vehicles: Application, challenges, and future development

The Road to a Robust and Affordable SiC Power MOSFET Technology

Coordinated Online Junction Temperature Estimation of MOSFETs and Antiparallel Diodes in Three-Phase SiC Inverters

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