Bond wires aging monitoring for IGBT module based on junction temperature difference of TSEPs

Abstract

In this paper, we propose to use the junction temperature difference estimated by two temperature-sensitive electric parameters (TSEPs), threshold voltage, and p-n junction forward voltage of the IGBT module to monitor the aging of the bond wires. When the bond wires are lifted off, the chip surface temperature and the overall temperature gradient will increase, making the temperature difference measured by these two TSEPs larger. A new method is proposed in this paper to monitor the aging of the bonding wires of IGBT modules by the difference between them, and the correctness of the proposed method is verified by experiments on IGBT modules with different degrees of bonding wire aging.

Monitoring method of solder layer void damage of IGBT module based on transfer function

“…IGBT module has many advantages such as low conduction voltage and large conduction current [1,2,3,4]. As the core component of power electronic system, it is widely used in industrial production, such as electric vehicle [5], aerospace [6] and wind power generation [7].…”