1997
DOI: 10.1021/jp9718459
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Bonding and Thermal Reactivity in Thin a-SiC:H Films Grown by Methylsilane CVD

Abstract: The bonding and thermal reactivity of thin a-SiC:H films have been studied and compared with that of methyl groups on single-crystalline Si and in thick polymer films. The films were deposited on silicon substrates at 200 K by hot-wire chemical vapor deposition (CVD) using methylsilane (CH3SiH3) as the precursor. The resulting films were probed by in situ multiple internal reflection−Fourier transform infrared (MIR−FTIR) spectroscopy, and the thermal decomposition products were measured by temperature-programm… Show more

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Cited by 37 publications
(56 citation statements)
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“…Similarly, the lack of significant absorption bands in the range of 2800-3100 cm À1 , shown in Fig. 5, indicate that either the C-H n (n ¼ 1, 2, 3) bond density is very low in the film [27], or C-H n (n ¼ 1, 2, 3) bonds have very weak FTIR absorption strength. Quite a few papers have been published on hydrogen states, hydrogen concentration, and hydride bond density in a-SiC films [19,27,[32][33][34][35][36], but possible disappearance of the absorption band of C-H n (n ¼ 1, 2, 3) bonds still remains as a controversial issue.…”
Section: Hydrogen Concentration and Chemical Order Investigationmentioning
confidence: 87%
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“…Similarly, the lack of significant absorption bands in the range of 2800-3100 cm À1 , shown in Fig. 5, indicate that either the C-H n (n ¼ 1, 2, 3) bond density is very low in the film [27], or C-H n (n ¼ 1, 2, 3) bonds have very weak FTIR absorption strength. Quite a few papers have been published on hydrogen states, hydrogen concentration, and hydride bond density in a-SiC films [19,27,[32][33][34][35][36], but possible disappearance of the absorption band of C-H n (n ¼ 1, 2, 3) bonds still remains as a controversial issue.…”
Section: Hydrogen Concentration and Chemical Order Investigationmentioning
confidence: 87%
“…5, indicate that either the C-H n (n ¼ 1, 2, 3) bond density is very low in the film [27], or C-H n (n ¼ 1, 2, 3) bonds have very weak FTIR absorption strength. Quite a few papers have been published on hydrogen states, hydrogen concentration, and hydride bond density in a-SiC films [19,27,[32][33][34][35][36], but possible disappearance of the absorption band of C-H n (n ¼ 1, 2, 3) bonds still remains as a controversial issue. Nonetheless, the following factors lead us to believe that most of hydrogen exists as C-H n (n ¼ 1, 2, 3) bonds in samples T650_HP and T600_HP: (1) the absorption band of the Si-C bond and Si-(CH 3 ) n (n ¼ 1, 2, 3) bonds sometimes overlap each other [32], (2) the oscillator strength of C-H bonds can be significantly reduced by the bonding environment [32], and (3) the significant reduction of hydrogen concentration (as revealed by SIMS) and the improvement of chemical order (shown by Si-C peak position and FWHM in FTIR spectra) at elevated temperatures.…”
Section: Hydrogen Concentration and Chemical Order Investigationmentioning
confidence: 99%
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“…Figure 35 shows the IR spectra obtained for products at different temperatures; data is offset to aid comparison. Peaks attributed to C-H (stretching), Si-H (stretching) and Si-C (rocking) bonds were clearly observed in the ranges of 2800-3000 cm −1 , 2000-2140 cm −1 and 870-1070 cm −1 [59,146,147], respectively.…”
Section: Physical and Analytical Characterizationmentioning
confidence: 98%
“…The commonly employed precursor sources for the deposition of a-SiC are the gas mixtures of SiH 4 + CH 4 [1,7] and H 2 + SiH 4 + C 2 H 4 [4], as well as single precursor methylsilane [14][15][16] (H 3 SiCH 3 , MS). Comparatively, single source precursor MS, containing directly bonded Si and C atoms, has the advantage of a simpler and the possibility of a more efficient chemical vapour deposition process.…”
Section: Introductionmentioning
confidence: 99%