Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics

Lucovsky, G.; Wu, Y.; Niimi, H.; Misra, Veena; Phillips, J. C.

doi:10.1063/1.123728

Cited by 162 publications

(132 citation statements)

References 11 publications

Supporting

Mentioning

119

Contrasting

Order By: Relevance

“…8 The amorphous SiN x matrix is highly constrained due to its high overall coordination number and, hence, exhibits a high concentration of defects as compared to other amorphous dielectrics such as a-SiO 2 . 9 These structural defects lead to electronic energy levels within the band-gap, which can trap charges and degrade its electronic properties for most applications.…”

Section: Introductionmentioning

confidence: 99%

Effect of topological disorder on structural, mechanical, and electronic properties of amorphous silicon nitride: An atomistic study

2012

View full text Add to dashboard Cite

ABSTRACT:We present a first principles study of the effect of atomic variability on the structure, mechanical and electronic properties of amorphous silicon nitride. Using a combination of molecular dynamics and density functional theory calculations we predict an ensemble of statistically independent, well-relaxed and stress-free amorphous silicon nitride structures. We analyze the short, intermediate, and long-range order of the structures generated using radial distribution functions, ring statistics, bond angle distributions, and translational invariance parameters. Though energetically very similar, these structures span a wide range of densities (2.75-3.25 g/cm 3 ) and bulk moduli (115GPa to 220 GPa) in good agreement with the fabrication-dependent experimental range. Chemical bonds and atomic defects are identified via a combination of bond distance cutoff and maximally localized Wannier function analysis. A significant number of the amorphous structures generated (~30%) are defect-free providing an ideal reference to characterize the formation energy of the various point defects and their defect energy levels. An analysis of the Kohn-Sham density of states and energetics of the structures reveals that defects in amorphous dielectrics have a distribution of associated properties (e.g. formation energies and electronic energy levels) due to variations in local atomic structure; this should be taken into consideration in physics-based continuum models of these materials.

show abstract

Section: Introductionmentioning

confidence: 99%

Effect of topological disorder on structural, mechanical, and electronic properties of amorphous silicon nitride: An atomistic study

2012

View full text Add to dashboard Cite

show abstract

“…5 Also, Lucovsky et al with their constraint theory deduced the necessity of this interfacial suboxide film to reach good electrical characteristics. 6,7 It is also known that during thermal anneals, SiO x :H films experiences the following network reaction: 1,8 SiO x →͑x/2͒SiO 2 ϩ͑1Ϫx/2͒Si, ͑1͒…”

Section: Introductionmentioning

confidence: 99%

Thermally induced modifications on bonding configuration and density of defects of plasma deposited SiOx:H films

Andrés

Prado

Mártil

et al. 2002

Journal of Applied Physics

View full text Add to dashboard Cite

The bonding configuration, hydrogen evolution, and defect content of rapid thermally annealed ͑RTA͒ SiO x :H films of different compositions were studied. Infrared absorption measurements showed that all the hydrogen present in the films is lost at annealing temperatures below 600°C without any change in the oxygen to silicon ratio of the films. The activation energy of the hydrogen release is in the 0.21-0.41 eV range independently of film composition, suggesting that the process occurs via network bond reactions. For annealing temperatures higher than 700°C, a change in the Si-O-Si stretching wave number from the initial unannealed value to the 1070-1080 cm Ϫ1 range was promoted, independently of the initial film composition. Electron spin resonance measurements showed that all the films contain two type of bulk paramagnetic defects: the EЈ center (•SiwO 3 ) and the silicon dangling bond center (•SiwSi 3 ). The RTA process promotes a general decrease of defect concentration for annealing temperatures below 400°C. At higher temperatures, EЈ center disappears, and the •SiwSi 3 center increases its concentration up to the 10 17 -10 18 cm Ϫ3 range. This suggests that the RTA at higher temperatures promotes the formation of a high-quality, almost defect-free, SiO 2 matrix in which highly defective Si nanocrystals are also formed, where the •SiwSi 3 centers are located.

show abstract

“…Although GeO 2 is not as physically stable a material as SiO 2 , GeO 2 /Ge shows the similar bonding constraint as its counterpart SiO 2 /Si system in terms of a large spread in bond angle and a random distribution of dihedral angles [65]. Moreover, similar to the high-k/Si system, which has an interfacial SiO 2 layer, a GeO 2 interfacial layer can be used to maintain a good interface condition for the high-k dielectric/Ge structure.…”

Section: Gate Dielectricsmentioning

confidence: 99%

Processing of germanium for integrated circuits

Duffy¹,

Shayesteh²,

Yu³

2014

Turk J Phys

View full text Add to dashboard Cite

Abstract:In this review paper the authors will focus on Ge processing for integrated circuits. The key areas that require the most attention are substrates and integration, gate dielectrics, and access resistance. We will discuss each of these topics in turn, while also reviewing the most scaled Ge field-effect-transistor devices, and consider how modelling activities have matured for Ge in recent years.

show abstract

Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics

Cited by 162 publications

References 11 publications

Effect of topological disorder on structural, mechanical, and electronic properties of amorphous silicon nitride: An atomistic study

Effect of topological disorder on structural, mechanical, and electronic properties of amorphous silicon nitride: An atomistic study

Thermally induced modifications on bonding configuration and density of defects of plasma deposited SiOx:H films

Processing of germanium for integrated circuits

Contact Info

Product

Resources

About