In the quest for
materials addressing the grand challenges of the
future, there is a critical need for a broad understanding of their
electronic structures because the knowledge of the electronic structure
of a given solid allows us to recognize its structural preferences
and to rationalize its properties. As previous research on quaternary
chalcogenides containing active metals (a group-I- or -II-element),
early transition-metals, and late transition-metals indicated that
such materials could pose as alluring systems in the developments
of thermoelectrics, our impetus was stimulated to probe the suitability
of tellurides belonging to the prolific A3R4Cu5Te10-family. In doing so, we first used
quantum-chemical techniques to explore the electronic and vibrational
properties of representatives crystallizing with different A3R4Cu5Te10 structure types. The outcome
of these explorations indicated that the aspects that control the
formation of a given type of A3R4Cu5Te10 structure are rather subtle so that transitions between
different types of A3R4Cu5Te10 structures could be induced by manipulating the ambient
conditions. To probe this prediction, we explored the thermal behavior
for the example of one quaternary telluride, that is, Rb3Er4Cu5Te10, and thereby identified
a new type of A3R4Cu5Te10 structure. Because understanding the structural features of the
A3R4Cu5Te10 family plays
an important role in the analyses of the aforementioned explorations,
we also present an overview about the structural features and the
members of this class of quaternary tellurides. In this connection,
we also provide a structural report of four tellurides, that is, K3Tb4Cu5Te10 and Rb3R4Cu5Te10 (R = Tb, Dy, Ho), which
have been obtained from high-temperature solid-state reactions for
the very first time.