Boosted Responsivity and Tunable Spectral Response in B‐Site Substituted 2D Ca2Nb3−xTaxO10 Perovskite Photodetectors

Liu, Xinya; Liu, Siyuan; Li, Ziqing; Zhang, Yong; Yang, Wei; Li, Ziliang; Liu, Hui; Shtansky, Dmitry V.; Fang, Xiaosheng

doi:10.1002/adfm.202101480

Cited by 39 publications

(34 citation statements)

References 48 publications

(56 reference statements)

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“…[ 33 ] Subsequently, Other 2D UWBG perovskite oxides have been developed by Fang's group, such as Ca 2 Nb 3 O 10 , [ 35 ] Ca 2 Nb 3‐ x Ta x O 10 . [ 62 ] Although the surfaces are disturbed by residua chemicals and the thickness distribution (down to few nanometers) and lateral sizes (mainly below 5 µm) are broadened, the excellent solution‐processing property is beneficial for fabricating large‐area optoelectronic devices. This work provides a synthesis strategy to exploit high‐performance optoelectronic devices based on 2D UWBG Dion–Jacobson perovskite oxides in the future.…”

Section: Recent Synthesis Strategies For 2d Uwbg Semiconductorsmentioning

confidence: 99%

“…[ 58,59 ] Then, the study quickly expand to other chalcogenide and has further inspired attention on other compounds, such as metal oxyhalides, metal nitrides, metal oxides, and Dion–Jacobson perovskite oxides. [ 28,33–35,60–74 ] Atomically thin 2D UWBG semiconductor materials have sky‐rocketing developed into a unique subdiscipline in the last decade, offering new possibilities for designing and fabricating (opto)electronic devices with novel functionalities at the nanoscale ( Figure ). Up to date, studies on 2D UWBG semiconductors have covered the crystal structures, synthesis methods, properties, and device applications.…”

Section: Introductionmentioning

confidence: 99%

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2D Ultrawide Bandgap Semiconductors: Odyssey and Challenges

et al. 2022

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Over the past decades, UWBG semiconductors employed in (opto)electronics are dominated by the traditional bulk materials, which have been extensively investigated and widely commercialized, such as Ga 2 O 3 , [1][2][3][4] diamond, [5][6][7] Mg x Zn 1-x O, [8] indium tin oxide (ITO), [9] indium gallium zinc oxide (IGZO), [10] III-nitride (GaN, AlN, Al x Ga 1-x N). [11] Furthermore, various methods have been used to improve devices performance via extensive research efforts, such as localized surface plasmon, [12,13] bandgap engineering, [14,15] array, [16][17][18] heterojunction. [19][20][21][22][23] However, in the post-Moore era, the traditional UWBG semiconductor devices with large size, high power and high cost cannot meet the future requirements of high-performance (opto)electronic devices. [24,25] In this regard, desingings of low-dimensional semiconductor material systems with novel structure and good adaptability have become a research hotspot.Successful exfoliation of graphene [38] in 2004 has tremendously boosted research on various 2D materials, including transition metal dichalcogenides (TMDs), [39][40][41][42][43][44][45] black phosphorous (b-P), [46][47][48] black arsenic (b-As), [49,50] phosphorous compounds, [51,52] hexagonal boron nitride (h-BN), [53][54][55][56] and Mxene. [57] Compared to devices based on narrow bandgap semiconductors, ultraviolet photodetectors based on 2D UWBG semiconductors need not costly high-pass optical filters to block out visible and infrared photons and without cooled to reduce dark current, leading to a significant loss of effective area of the system. Hence, the emergence of devices based on 2D ultrawide bandgap semiconductors has opened up an avenue to circumvent the dilemma mentioned above.The group metal chalcogenides (GaS, GaSe) are known for wide-range bandgap and are among the first to be investigated. [58,59] Then, the study quickly expand to other chalcogenide and has further inspired attention on other compounds, such as metal oxyhalides, metal nitrides, metal oxides, and Dion-Jacobson perovskite oxides. [28,[33][34][35][60][61][62][63][64][65][66][67][68][69][70][71][72][73][74] Atomically thin 2D UWBG semiconductor materials have sky-rocketing developed into a unique subdiscipline in the last decade, offering new possibilities for designing and fabricating (opto)electronic devices with novel functionalities at the nanoscale (Figure 1). Up to date, studies on 2D 2D ultrawide bandgap (UWBG) semiconductors have aroused increasing interest in the field of high-power transparent electronic devices, deep-ultraviolet photodetectors, flexible electronic skins, and energy-efficient displays, owing to their intriguing physical properties. Compared with dominant narrow bandgap semiconductor material families, 2D UWBG semiconductors are less investigated but stand out because of their propensity for high optical transparency, tunable electrical conductivity, high mobility, and ultrahigh gate dielectrics. At the current stage of research, the most intensively investiga...

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Section: Recent Synthesis Strategies For 2d Uwbg Semiconductorsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

2D Ultrawide Bandgap Semiconductors: Odyssey and Challenges

et al. 2022

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“…Decreasing the size of metal nanoparticle to sub‐nanometer or atomic scale can prominently enhance atomic utilization and durability, concurrently, reduce the dosage of metal. [ 151,152 ] Hence, anchoring single transition metal atom on reasonable support can accelerate electrocatalytic ORR activity via promoting metal–support interaction, exposing more active sites, and generating unmatched reaction pathways. [ 153,154 ]…”

Section: Electrocatalytic Applicationmentioning

confidence: 99%

MXenes as Superexcellent Support for Confining Single Atom: Properties, Synthesis, and Electrocatalytic Applications

Zhang

Lai

et al. 2021

Small

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Single atom catalysts (SACs) have shown their noticeable potential and gradually become a new favorite in catalytic field due to the particular selectivity, high catalytic performance, and strong durability. The most important factor in the synthesis of SACs is the selection of appropriate support and formation of metal–support interaction. Among a large number of nanomaterials, MXenes can be utilized as benign supports for fixing SACs because of their expansive specific surface area, regulable bandgap, superior electronic conductivity, and strong mechanical stability. The structure and property of MXenes can be manipulated by changing transition metal elements and surface termination. Here, the uniqueness and superiority of MXenes as superexcellent supports for confining SACs are analyzed from structure and property. The synthetic strategy of MXene‐supported SACs is also summarized, especially emphasizing the immobilization of isolated atom against aggregation by utilizing the formidable metal–support covalent coordination interaction. In addition, the applications of MXene‐supported SACs in electrocatalytic field are highlighted, including hydrogen evolution reaction, oxygen evolution reaction, overall water splitting, oxygen reduction reaction, and nitrogen reduction reaction. Finally, the challenges and prospects are pointed out for the further understanding and practical application of MXene‐supported SACs in electrocatalysis.

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“…Dopants lead to favorable or unfavorable alignment of the ancillary layers and strongly affect the overall device performance. [61] Spectroscopic insights (ultrafast [62] and magnetic-based ones mainly) and modeling [63] are required for understanding the characteristics of these traps, being shallow or deep, in MOSs, which are often wide band gap materials like TiO 2 , ZnO, or SnO 2 .…”

Section: Theoretical Background and Design Strategies For The Rationale Doping Of Moss Active In Light-conversionmentioning

confidence: 99%

Opportunities from Doping of Non‐Critical Metal Oxides in Last Generation Light‐Conversion Devices

Gatti

Lamberti

Mazzaro

et al. 2021

Advanced Energy Materials

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The need to develop sustainable energy solutions is an urgent requirement for society, with the additional requirement to limit dependence on critical raw materials, within a virtuous circular economy model. In this framework, it is essential to identify new avenues for light‐conversion into clean energy and fuels exploiting largely available materials and green production methods. Metal oxide semiconductors (MOSs) emerge among other species for their remarkable environmental stability, chemical tunability, and optoelectronic properties. MOSs are often key constituents in next generation energy devices, mainly in the role of charge selective layers. Their use as light harvesters is hitherto rather limited, but progressively emerging. One of the key strategies to boost their properties involves doping, that can improve charge mobility, light absorption and tune band structures to maximize charge separation at heterojunctions. In this review, effective methods to dope MOSs and to exploit the derived benefits in relation to performance enhancement in different types of devices are identified and critically compared. The work is focused specifically on the best opportunities coming from the use of non‐critical raw materials, so as to contribute in defining an economically feasible roadmap for light conversion technologies based on these highly stable and widely available compounds.

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Boosted Responsivity and Tunable Spectral Response in B‐Site Substituted 2D Ca₂Nb₃₋_xTa_xO₁₀ Perovskite Photodetectors

Cited by 39 publications

References 48 publications

2D Ultrawide Bandgap Semiconductors: Odyssey and Challenges

2D Ultrawide Bandgap Semiconductors: Odyssey and Challenges

MXenes as Superexcellent Support for Confining Single Atom: Properties, Synthesis, and Electrocatalytic Applications

Opportunities from Doping of Non‐Critical Metal Oxides in Last Generation Light‐Conversion Devices

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