2017
DOI: 10.1007/s11468-017-0679-x
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Boosted UV Sensitivity of Er-Doped In2O3 Thin Films Using Plasmonic Ag Nanoparticle-Based Surface Texturing

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Cited by 12 publications
(2 citation statements)
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“…7. It was observed that the device is extremely sensitive under UV light (wavelength = 320 nm) excitation than visible illumination (wavelength = 680 nm) at an applied bias voltage of −2 V with rising time = 0.138 s and fall time = 0.132 s. Therefore, such Au/Cr:In 2 O 3 /p-Si structure-based photodetector can be used as an effective UV detector as the relatively simple device structures are also desirable for optoelectronic switches and optical communications [20][21][22][23][24].…”
Section: Temperature-dependent Photosensitivity and Temporal Responsementioning
confidence: 99%
“…7. It was observed that the device is extremely sensitive under UV light (wavelength = 320 nm) excitation than visible illumination (wavelength = 680 nm) at an applied bias voltage of −2 V with rising time = 0.138 s and fall time = 0.132 s. Therefore, such Au/Cr:In 2 O 3 /p-Si structure-based photodetector can be used as an effective UV detector as the relatively simple device structures are also desirable for optoelectronic switches and optical communications [20][21][22][23][24].…”
Section: Temperature-dependent Photosensitivity and Temporal Responsementioning
confidence: 99%
“…In addition, for this event to be more effective, the particles that create the metallic layer must be of equal size. The plasmon resonance absorbance and its bandwidth depend on the particle size and shape, dielectric properties of the surrounding medium, concentration and aggregation states [14,15]. The plasmon resonance wavelength gets blueshifted with a decrease of particle size and the bandwidth, in general, increases with the decrease of particle size [16].…”
Section: Introductionmentioning
confidence: 99%