Due to intrinsic defects in blue-light-emitting perovskite materials, the charge carriers are prone to being trapped by the trap states. Therefore, the preparation of efficient blue-light-emitting perovskite materials remains a significant challenge. Herein, CsPb(Cl/Br) 3 nanocrystal (NCs)@SiO 2 structures were fabricated through hydrolyzing (3-aminopropyl)-triethoxysilane (APTS). SiO 2 can passivate the surface trap states of NCs, suppress the nonradiative recombination pathways of NCs, and effectively stabilize the surface of NCs. CsPb(Cl/Br) 3 NCs@SiO 2 exhibits higher photoluminescence (PL) intensity and lifetime compared to those of the pure CsPb(Cl/Br) 3 NCs. The enhancement of the exciton binding energy (E b ) leads to increased PL intensity and lifetime in CsPb(Cl/Br) 3 NCs @SiO 2 , as demonstrated by temperature-dependent PL spectra. Subsequently, a 0.3 mm film of CsPb(Cl/Br) 3 NCs@SiO 2 /poly(methyl methacrylate) (PMMA) was fabricated through optimizing the casting method. Due to the effective protection provided by SiO 2 and PMMA, CsPb(Cl/Br) 3 NCs@SiO 2 /PMMA film exhibits excellent thermal, water, and air stability. Moreover, the CsPb(Cl/Br) 3 NCs@SiO 2 /PMMA film also exhibits good flexibility, maintaining the PL intensity unchanged under bending conditions. Importantly, lead can be well encapsulated in SiO 2 and PMMA, effectively preventing lead from leaking into the environment. This research demonstrates the potential of a CsPb(Cl/Br) 3 NCs@SiO 2 /PMMA film for applications in the friendly environmental field of optoelectronics, including light-emitting diodes (LEDs) and flexible displays.