2024
DOI: 10.1016/j.jcis.2023.10.049
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Boosting the photocatalytic activity of β-FeOOH catalyst for toluene oxidation by constructing internal electric field at 0D/1D homojunction interfaces

Zhichun Si,
Mengxi Pei,
Yishui Liu
et al.
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Cited by 4 publications
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“…In n-type semiconductors, the conduction band potential ( E CB ) is generally 0.1–0.2 V more negative than the flat band potential. 45,46 Utilizing the formula E NHE = E CB + 0.241 V, the specific E CB positions for GDY and CoAl 2 O 4 were −0.64 V and −1.24 V versus the normal hydrogen electrode (NHE). Consequently, it can be inferred that the valence band potentials ( E VB ) for GDY and CoAl 2 O 4 were 1.15 V and 0.45 V versus NHE, as determined using the formula: E VB = E g + E CB .…”
Section: Resultsmentioning
confidence: 99%
“…In n-type semiconductors, the conduction band potential ( E CB ) is generally 0.1–0.2 V more negative than the flat band potential. 45,46 Utilizing the formula E NHE = E CB + 0.241 V, the specific E CB positions for GDY and CoAl 2 O 4 were −0.64 V and −1.24 V versus the normal hydrogen electrode (NHE). Consequently, it can be inferred that the valence band potentials ( E VB ) for GDY and CoAl 2 O 4 were 1.15 V and 0.45 V versus NHE, as determined using the formula: E VB = E g + E CB .…”
Section: Resultsmentioning
confidence: 99%