Until now, III-V semiconductors have been primarily employed for commercial SAs because of their certified stabilities and performance. However, they suffer from limited operating bandwidth and expensive fabrication costs, which demand the development of new costeffective broadband SAs, ideally with more superior performance. To this end, a variety of materials have been investigated thus far, which include carbon nanotubes, [5][6][7][8][9][10][11][12] black phosphorus, [13][14][15][16][17][18] gold nanoparticles [19][20][21][22][23] and/or nanorods, [24] filled-skutterudites, [25] and topological insulators (TIs). [26][27][28][29][30][31][32][33][34][35][36][37][38][39][40] Recently, enormous research efforts have been dedicated to 2D materials such as graphene, [41][42][43][44][45][46][47][48] graphene oxide, [49] phosphorene, [50] and transition-metal dichalcogenides (TMDCs), as well as MXene that was first suggested by our recent study indi-