2023
DOI: 10.1021/acsami.3c01404
|View full text |Cite
|
Sign up to set email alerts
|

Boosting Thermoelectric Performance in Epitaxial GeTe Film/Si by Domain Engineering and Point Defect Control

Abstract: This study demonstrates a simultaneous realization of ultralow thermal conductivity and high thermoelectric power factor in epitaxial GeTe thin films/Si substrates by a combination of the interface introduction by domain engineering and the suppression of Ge vacancy generation by point defect control. We formed epitaxial Te-poor GeTe thin films having low-angle grain boundaries with a misorientation angle close to 0° or twin interfaces with a misorientation angle close to 180°. The control of interfaces and po… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

1
3
0

Year Published

2023
2023
2024
2024

Publication Types

Select...
9

Relationship

2
7

Authors

Journals

citations
Cited by 13 publications
(4 citation statements)
references
References 61 publications
1
3
0
Order By: Relevance
“…These power factor values are comparable to those obtained by Robinson et al for low-pressure chemical vapor deposition of GeTe on fused quartz substrates (depending on the growth temperature, the values ranged between 6.12 μV/cmK 2 and 1.02 μV/cmK 2 ) . On the other hand, these values are lower than those obtained for epitaxial GeTe (9.3 μV/cmK 2 ), due to a larger Seebeck coefficient (40 μV/K) and slightly larger electrical conductivity (5720 S/cm) . The Seebeck coefficient is in good agreement with values obtained for bulk GeTe.…”
Section: Resultssupporting
confidence: 84%
“…These power factor values are comparable to those obtained by Robinson et al for low-pressure chemical vapor deposition of GeTe on fused quartz substrates (depending on the growth temperature, the values ranged between 6.12 μV/cmK 2 and 1.02 μV/cmK 2 ) . On the other hand, these values are lower than those obtained for epitaxial GeTe (9.3 μV/cmK 2 ), due to a larger Seebeck coefficient (40 μV/K) and slightly larger electrical conductivity (5720 S/cm) . The Seebeck coefficient is in good agreement with values obtained for bulk GeTe.…”
Section: Resultssupporting
confidence: 84%
“…Unfortunately, the interdependent relationship among the three parameters has prevented the enhancement of TE performance. [19][20][21][22][23][24][25][26][27][28][29][30] In recent years, synthesizing nanocomposite materials has been one of the approaches for enhancing TE performance. For example, κ reduction was brought by intensifying the phonon scattering at the interfaces of nanostructure/matrix material.…”
Section: Introductionmentioning
confidence: 99%
“…Chalcogenide materials such as GeTe and PbTe are known to exhibit remarkable thermoelectric properties [1,2]. Out of the many chalcogenide materials, bismuth telluride is a material that has been attracting recent interest due to its high thermoelectric performance at room temperature (RT) [3] and strong prospects for being incorporated in antibacterial and antimicrobial applications [4,5].…”
Section: Introductionmentioning
confidence: 99%