Boosting thermoelectric performance of SnTe by selective alloying and band tuning

Zhang, Yu; Li, Jun; Hu, Weiwei; Xian, Yang; Tang, Xinfeng; Tan, Gangjian

doi:10.1016/j.mtener.2022.100958

Cited by 17 publications

(22 citation statements)

References 61 publications

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“…Impressively, the zT avg of ∼0.87 (303-853 K) represents the frontier level of SnTe-based thermoelectric materials. 29,33,34,42,43,48,[67][68][69][70]…”

Section: Resultsmentioning

confidence: 99%

Enhanced thermoelectric performance in high-defect SnTe alloys: a significant role of carrier scattering

Zhang

Zhao

et al. 2022

J. Mater. Chem. A

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“…Impressively, the zT avg of ∼0.87 (303-853 K) represents the frontier level of SnTe-based thermoelectric materials. 29,33,34,42,43,48,[67][68][69][70]…”

Section: Resultsmentioning

confidence: 99%

Enhanced thermoelectric performance in high-defect SnTe alloys: a significant role of carrier scattering

Zhang

Zhao

et al. 2022

J. Mater. Chem. A

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“…Subsequently, a wide variety of TE materials, such as sulfides, selenides, silicides, skutterudites, intermetallic compounds, oxides, organic polymers, and carbon nanomaterials, etc. [ 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 ] have been developed. These were mostly developed as mid- to high-temperature TE materials, some of which include SnSe, SnS 0.91 Se 0.09 , SnTe, GeTe, and Cu 2 Te-based compounds, etc.…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric Power Generation of TiS2/Organic Hybrid Superlattices Below Room Temperature

et al. 2023

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Recently, the n-type TiS2/organic hybrid superlattice (TOS) was found to have efficient thermoelectric (TE) properties above and near room temperature (RT). However, its TE performance and power generation at the temperature gradient below RT have not yet been reported. In this work, the TE performance and power generation of the TOS above and below RT were investigated. The electrical conductivity (σ) and Seebeck coefficient (S) were recorded as a function of temperature within the range 233–323 K. The generated power at temperature gradients above (at ΔT = 20 and 40 K) and below (at ΔT = −20 and −40 K) RT was measured. The recorded σ decreased by heating the TOS, while |S| increased. The resulting power factor recorded ~100 µW/mK2 at T = 233 K with a slight increase following heating. The charge carrier density and Hall mobility of the TOS showed opposite trends. The first factor significantly decreased after heating, while the second one increased. The TE-generated power of a single small module made of the TOS at ΔT = 20 and 40 K recorded 10 and 45 nW, respectively. Surprisingly, the generated power below RT is several times higher than that generated above RT. It reached 140 and 350 nW at ΔT = −20 and −40 K, respectively. These remarkable results indicate that TOS might be appropriate for generating TE power in cold environments below RT. Similar TE performances were recorded from both TOS films deposited on solid glass and flexible polymer, indicating TOS pertinence for flexible TE devices.

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“…[9,10] In order to obtain an ideal power factor, numerous effective strategies have been adopted, such as carrier concentration optimizations, band structure modifications and chemical doping. [10][11][12][13][14][15][16][17] In order to restrain thermal conductivity, various approaches such as creating atomic scale point defects, manufacturing nano scale precipitates and dislocations, and increasing the sub-micro scale grain boundaries have been adopted extensively. [12,13,[16][17][18][19][20][21] However, the complicated interdependence of TE parameters S, σ, and κ e related with carrier concentration n leads to the hardship to enhance the overall ZT.…”

Section: Introductionmentioning

confidence: 99%

“…[10][11][12][13][14][15][16][17] In order to restrain thermal conductivity, various approaches such as creating atomic scale point defects, manufacturing nano scale precipitates and dislocations, and increasing the sub-micro scale grain boundaries have been adopted extensively. [12,13,[16][17][18][19][20][21] However, the complicated interdependence of TE parameters S, σ, and κ e related with carrier concentration n leads to the hardship to enhance the overall ZT. [22,23] The IV-VI telluride compounds materials such as PbTe, GeTe, and SnTe possess narrow bandgap and exhibit superior TE performance, which is conducive to the conversion of waste heat at intermediate temperatures.…”

Section: Introductionmentioning

confidence: 99%

Vacancy Manipulation Induced Optimal Carrier Concentration, Band Convergence and Low Lattice Thermal Conductivity in Nano‐Crystalline SnTe Yielding Superior Thermoelectric Performance

Zhang

Pan

Ning

et al. 2022

Adv Funct Materials

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Synergetic optimization of electrical and thermal transport properties is achieved for SnTe‐based nano‐crystalline materials. Gd doping is able to suppress the Sn vacancy, which is confirmed by positron annihilation measurements and corresponding theoretical calculations. Hence, the optimal hole carrier concentration is obtained, leading to the improvement of electrical transport performance and simultaneous decrease of electronic thermal conductivity. In addition, the incremental density of states effective mass m* in SnTe is realized by the promotion of the band convergence via Gd doping, which is further confirmed by the band structure calculation. Hence, the enhancement of the Seebeck coefficient is also achieved, leading to a high power factor of 2922 µW m−1 K−2 for Sn0.96Gd0.04Te at 900 K. Meanwhile, substantial suppression of the lattice thermal conductivity is observed in Gd‐doped SnTe, which is originated from enhanced phonon scattering by multiple processes including mass and strain fluctuations due to the Gd doping, scattering of grain boundaries, nano‐pores, and secondary phases induced by Gd doping. With the decreased phonon mean free path and reduced average phonon group velocity, a rather low lattice thermal conductivity is achieved. As a result, the synergetic optimization of the electric and thermal transport properties contributes to a rather high ZT value of ≈1.5 at 900 K, leading to the superior thermoelectric performance of SnTe‐based nanoscale polycrystalline materials.

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Boosting thermoelectric performance of SnTe by selective alloying and band tuning

Cited by 17 publications

References 61 publications

Enhanced thermoelectric performance in high-defect SnTe alloys: a significant role of carrier scattering

Enhanced thermoelectric performance in high-defect SnTe alloys: a significant role of carrier scattering

Thermoelectric Power Generation of TiS2/Organic Hybrid Superlattices Below Room Temperature

Vacancy Manipulation Induced Optimal Carrier Concentration, Band Convergence and Low Lattice Thermal Conductivity in Nano‐Crystalline SnTe Yielding Superior Thermoelectric Performance

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