2004
DOI: 10.2320/matertrans.45.1306
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Boron and Nitrogen in GaAs and InP Melts Equilibrated with B<SUB>2</SUB>O<SUB>3</SUB> Flux

Abstract: The boron and nitrogen contents of GaAs and InP melts equilibrated with B 2 O 3 flux were examined at 1523 and 1373 K, respectively, using a chemical equilibrium technique. GaAs or InP was melted with B 2 O 3 flux in a silica ampoule with and without a BN crucible. The boron content decreased with increasing nitrogen content in both of the melts equilibrated with B 2 O 3 flux and BN. The solubility product of BN in the melts was expressed as a function of nitrogen content. The relationship between the boron an… Show more

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