Boron carbide films deposited by a magnetron sputter–ion plating process: film composition and tribological properties

Reigada, D. C.; Prioli, R.; Jacobsohn, L.G.; Freire, F. L.

doi:10.1016/s0925-9635(99)00318-0

Cited by 54 publications

(20 citation statements)

References 17 publications

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“…Details were published elsewhere [20,24]. The density of the films was obtained by the combination of the areal density given by IBA, and the film thickness measured by a stylus profilometer.…”

Section: Methodsmentioning

confidence: 99%

“…However, despite all these efforts to overcome the high residual stress limitation of these films, the study of the nanotribological properties of B 4 C and BCN films is still very limited [21][22][23][24]. The aim of this work is to review our recent results on boron carbide (B 4 C) and boron carbon nitride films (BC x N y ) deposited by dc-magnetron sputtering.…”

Section: Introductionmentioning

confidence: 99%

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Boron Carbide and Boron-Carbon Nitride Films Deposited by DC-Magnetron Sputtering: Structural Characterization and Nanotribological Properties

Freire

Reigada

Prioli

2001

phys. stat. sol. (a)

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The effects of nitrogen incorporation into amorphous boron carbide (B 4 C) films were studied. The films were deposited by dc-magnetron sputtering with the Si substrates at room temperature. The nitrogen incorporation occurs at the expense of the boron content. The main feature of infrared absorption spectra obtained from B 4 C films is a broad band at around 1100 cm --1 that shifts to higher wavenumbers upon nitrogen incorporation. The spectra obtained from films with higher nitrogen content are typical of hexagonal boron nitride. The friction coefficient and the surface wear were studied by lateral force microscopy. The influence of several parameters like relative humidity, scanning velocity and load force was investigated. For boron-carbon nitride films, a weak dependence on the relative humidity of wear and friction coefficients was observed. In the case of B 4 C films, there is a clear correlation between the wear depth and the energy deposited at the AFM tip-film interface.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Boron Carbide and Boron-Carbon Nitride Films Deposited by DC-Magnetron Sputtering: Structural Characterization and Nanotribological Properties

Freire

Reigada

Prioli

2001

phys. stat. sol. (a)

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“…6 However, ta-C and c-BN are insulating materials with specific resistivities in the order of 10 10 ⍀ cm, 6 but B 4 C shows lower values between 10 3 and 10 9 ⍀ cm depending on the microstructure, stoichiometry, and deposition technique used. 7,8 At this writing, B 4 C films have mainly been grown by various chemical vapor deposition ͑CVD͒ techniques 8,9 and magnetron sputtering 10 with many different objectives including as a coating for nuclear fusion reactors. The deposited films are amorphous, but these high rate deposition techniques are not suitable for the controlled growth of uniform and pinhole-free thin ͑Ͻ20 nm͒ films.…”

mentioning

confidence: 99%

“…The broadness is an indication for the amorphous structure of the grown films. 9,10 The electrical properties of the B X C films were obtained from current-voltage (I -V) curves measured in the dark at RT with evaporated Au contacts as one electrode and the Si substrate as the other. We used standard p-type silicon with a specific resistivity of 5-14 ⍀ cm.…”

mentioning

confidence: 99%

Superhard, conductive coatings for atomic force microscopy cantilevers

Ronning

Wondratschek

Büttner

et al. 2001

Applied Physics Letters

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Boron carbide thin films were grown by mass selected ion beam deposition using low energy 11 B ϩ and 12 C ϩ ions at room temperature. The amorphous films exhibit any desired stoichiometry controlled by the ion charge ratio B ϩ /C ϩ . Films with a stoichiometry of B 4 C showed the optimal combination of a high mechanical strength and a low electrical resistivity for the coating of atomic force microscopy ͑AFM͒ silicon cantilevers. The properties of such AFM tips were evaluated and simultaneous topography and Kelvin mode AFM measurements with high lateral resolution were performed on the systems ͑i͒ Au nanoparticles on a p-WS 2 surface and ͑ii͒ conducting/ superconducting YBa 2 Cu 3 O 7Ϫx . © 2001 American Institute of Physics. ͓DOI: 10.1063/1.1415354͔ Atomic force microscopy ͑AFM͒ is one of the most powerful tools for surface characterization and has become indispensable for surface and materials science. Sophisticated AFM techniques have been rapidly developed in recent years and the progress is mainly due to the improvements made on the properties of the AFM tips. 1 For example, electrically conductive layers covering the AFM cantilevers provide the feasibility of synchronous measurement of the topography and the electrical properties of the specimen. 2 Tips coated with metals are perfect for noncontact Kelvin-mode measurements 3 and the obtained contact potential difference ͑CPD͒ pictures display a high lateral resolution. 4 However, the mechanical stability of such thin evaporated or sputtered coatings is very low, which results in a short lifetime in the order of a few pictures. 5 Therefore, hard-and low-resistivity coatings are highly desired and further requirements to the coating for the ideal AFM tip are: good adhesion, pinhole free with uniform thickness, atomic flat, and the coating should not be thicker than 20-30 nm in order to avoid an increased curvature radius of the tip.Layers of tetrahedrally bonded amorphous carbon ͑ta-C͒, cubic boron nitride (c-BN), and boron carbide (B 4 C) come into consideration as ideal coatings among the superhard materials. In contrast to chemical vapor deposited diamond, these materials can be grown at low temperature and exhibit an almost atomic flat surface, if they are deposited by physical vapor deposition techniques. 6 However, ta-C and c-BN are insulating materials with specific resistivities in the order of 10 10 ⍀ cm, 6 but B 4 C shows lower values between 10 3 and 10 9 ⍀ cm depending on the microstructure, stoichiometry, and deposition technique used. 7,8 At this writing, B 4 C films have mainly been grown by various chemical vapor deposition ͑CVD͒ techniques 8,9 and magnetron sputtering 10 with many different objectives including as a coating for nuclear fusion reactors. The deposited films are amorphous, but these high rate deposition techniques are not suitable for the controlled growth of uniform and pinhole-free thin ͑Ͻ20 nm͒ films. Further disadvantages of CVD are high growth temperatures and the necessary use of very toxic boron compounds or gases.In thi...

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“…1100ºC felett viszont a bór-karbid a listavezetı: keménysége meghaladja mind a gyémántét, mind a köbös bór-nitridét [4]. Az extrém keménység mellett kis sőrőség, magas olvadáspont és jó kémiai ellenálló képesség is jellemzi ezt a sokoldalú félvezetıt, amely súrlódáscsökkentı és kopásálló rétegként ugyanolyan jól beválik, mint az EUV tartományban (12,(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15) nm) mőködı, több rétegő szőrık hımérsékleti stabilitását növelı határréteg [5][6][7][8][9]. A bór-karbid -különösen magas hımérsékleteken -kitőnı termoelektromos tulajdonságokat mutat: B 4 C-B 9 C vékonyréteg struktúrák képezik a termoelektromos hőtı/áramtermelı eszközök egyik legígéretesebb új verzióját [10,11].…”

Section: A Munka Elızményei: Irodalmi áTtekintésunclassified

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Boron carbide films deposited by a magnetron sputter–ion plating process: film composition and tribological properties

Cited by 54 publications

References 17 publications

Boron Carbide and Boron-Carbon Nitride Films Deposited by DC-Magnetron Sputtering: Structural Characterization and Nanotribological Properties

Boron Carbide and Boron-Carbon Nitride Films Deposited by DC-Magnetron Sputtering: Structural Characterization and Nanotribological Properties

Superhard, conductive coatings for atomic force microscopy cantilevers

Nanoszerkezetű rétegek és individuális nanorészecskék előállítása ultrarövid lézer impulzusokkal végzett ablációval

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