Boron-carbon-nitrogen materials of graphite-like structure

Kaner, Richard B.; Kouvetakis, John; Warble, C. E.; Sattler, M.L.; Bartlett, Neil

doi:10.1016/0025-5408(87)90058-4

Cited by 275 publications

(105 citation statements)

References 2 publications

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“…There are some experimental works as well reporting successful synthesis of BCN materials [159][160][161][162] . BCN films have also been synthesized by CVD using C, B and N precursors.…”

Section: Hybridsmentioning

confidence: 99%

Graphene Synthesis and Band Gap Opening

Jariwala

Srivastava²,

Ajayan³

2011

J. Nanosci. Nanotech.

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Graphene-the wonder material has attracted a great deal of attention from varied fields of condensed matter physics, materials science and chemistry in recent times. Its 2D atomic layer structure and unique electronic band structure makes it attractive for many applications. Its high carrier mobility, high electrical and thermal conductivity make it an exciting material. However, its applicability cannot be effectively realised unless facile techniques to synthesize high quality, large area graphene are developed in a cost effective way. Besides that a great deal of effort is required to develop techniques for modifying and opening its band structure so as to make it a potential replacement for silicon in future electronics. Considerable research has been carried out for synthesizing graphene and related materials by a variety of processes and at the same time a great deal of work has also taken place for manipulating and opening its electronic band structure. This review summarizes recent developments in the synthesis methods for graphene. It also summarizes the developments in graphene nanoribbon synthesis and methods to open band gap in graphene, in addition to pointing out a direction for future research and developments.

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“…There are some experimental works as well reporting successful synthesis of BCN materials [159][160][161][162] . BCN films have also been synthesized by CVD using C, B and N precursors.…”

Section: Hybridsmentioning

confidence: 99%

Graphene Synthesis and Band Gap Opening

Jariwala

Srivastava²,

Ajayan³

2011

J. Nanosci. Nanotech.

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“…Unfortunately, these works contain only a few data on the chemical and phase composition of the obtained compounds. The BCN material was more thoroughly characterized for the first time by Kaner et al (Kaner et al, 1987). In this paper, boron carbonitride with graphite-like structure was synthesized in the heated gas mixture:…”

Section: Boron Carbonitridesmentioning

confidence: 99%

“…As secondary constituents or as impurities boron carbide B 4 C and graphite C were identified. In the first (to our knowledge) experimental paper on BCN from the United States (Kaner et al, 1987) another group dealing with BCN is cited (Badzian, 1972). In the paper of Kaner et al outstanding analytical methods as XRD and XPS were applied for the characterization of the product, not being a mixture of BN+C but a specific new chemical compound B x C y N z with a ratio of boron and nitrogen approximately 1:1 and an increasing fraction of C with increasing temperature at synthesis.…”

Section: Boron Carbonitride Compoundsmentioning

confidence: 99%

Compilation on Synthesis, Characterization and Properties of Silicon and Boron Carbonitride Films

Hoffmann¹,

Файнер²,

Косинова³

et al. 2011

Silicon Carbide - Materials, Processing and Applications in Electronic Devices

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“…In contrast, the peak at ca. 188.5 eV can be attributed to BC bonding, 9 and the peaks at 190192 eV are …”

mentioning

confidence: 99%

“…In contrast, the peak at ca. 188.5 eV can be attributed to BC bonding, 9 and the peaks at 190192 eV are The B/C atomic ratios of the 0.5 atom % B and 1.0 atom % Bdoped a-C materials were estimated from the B1s to C1s peak intensity ratios to be 0.46 and 1.1%, respectively. These values are consistent with B contents estimated by ICP analysis.…”

mentioning

confidence: 99%

Synthesis and Characterization of Semiconducting Boron-doped Amorphous Carbon Materials Using an Organic Boron Compound as a Precursor

Inoue¹,

Kitano²,

Nakajima³

et al. 2011

Chemistry Letters

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Boron-doped amorphous carbon was synthesized by polymerizing naphthalene and triphenylborane with subsequent heat treatment by spark plasma sintering. The boron-doped carbon material has negative Seebeck coefficient (¹0.22 mV K ¹1 ), which indicates the carbon material functions as an n-type semiconductor.The allotropes of carbon materials such as graphene, fullerenes, and carbon nanotubes have attracted increasing attention due to their novel physical and unusual electronic properties. These graphitic materials, which consist of sp 2 hybridized carbons, have been employed as field effect transistors, field emission electrodes, and solar cells.1 On the other hand, thin films of amorphous carbon (a-C) that contain mixed configurations of threefold (sp 2 ) and fourfold (sp 3 ) coordinate sites have a number of useful properties, such as high dielectric strength, chemical stability, 2,3 and a tunable band gap by adjusting the sp 2 and sp 3 bond ratios. Applications of a-C in the field of semiconductors are wide. 4 In order to modify the electronic properties of a-C, heteroatoms such as N and B are often used as dopants, producing n-type and p-type semiconductor behavior, respectively. 5,6Organic boron compounds are more stable and less toxic than B-source materials such as diborane or boron chloride and are expected to be efficiently incorporated into carbon frameworks. In this study, B-doped a-C semiconducting materials that exhibit an n-type semiconducting behavior were prepared using an organic boron compound.B-doped a-C materials were synthesized by polymerizing naphthalene and triphenylborane in the presence of AlCl 3 , followed by heating the resulting carbon precursor by spark plasma sintering (SPS). Synthesis involved the following twostep procedure: 7.5 g of naphthalene, 0.78 (0.5 atom % B-doped sample) or 1.96 g (1.0 atom % B-doped sample) of triphenylborane, and 4.0 g of AlCl 3 were mixed and heated at 673 K for 50 h under nitrogen gas flow. The obtained carbon precursor (powder) was washed repeatedly with ethanol and tetrahydrofuran to remove residual AlCl 3 . The resulting carbon precursors were pressed under 50 MPa in a spark plasma sintering apparatus (SPS515S, SPS Syntex Inc.). The samples were heated to 873 K at 100 K min ¹1 and held for 10 min to produce sample pellets (diameter: 15 mm, thickness: 2 mm). Figure 1A shows Raman spectra of the nondoped and Bdoped a-C materials. The peaks observed at 1580 and 1350 cm ¹1 are attributed to the G (stretching mode of graphite) and D (breathing mode) bands, respectively. There is no difference in the ratio of the G to D band intensities between the samples with and without B, and the average size of graphene was estimated to be 1.2 nm.3 The Raman spectra in Figure 1A also have shoulder peaks at around 1220 and 1440 cm ¹1 that are assignable to the symmetric vibrational mode of CC bonds in finite domain size polycyclic aromatic hydrocarbons (PAHs). 7 This indicates that these a-C materials consist of a mixed structure of small carbon sheets and PAHs. Figure...

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Boron-carbon-nitrogen materials of graphite-like structure

Cited by 275 publications

References 2 publications

Graphene Synthesis and Band Gap Opening

Graphene Synthesis and Band Gap Opening

Compilation on Synthesis, Characterization and Properties of Silicon and Boron Carbonitride Films

Synthesis and Characterization of Semiconducting Boron-doped Amorphous Carbon Materials Using an Organic Boron Compound as a Precursor

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