Boron diffusion and penetration in ultrathin oxide with poly-Si gate

Cao, Min; Voorde, Paul Vande; Cox, M. G. C.; Greene, W.

doi:10.1109/55.704403

Cited by 77 publications

(11 citation statements)

References 10 publications

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“…2 These problems lead to poor device performance and degradation of gate oxide integrity. [3][4][5][6] Direct metal gate may be a choice to overcome the gate depletion and boron penetration problems; however, it is at incipient development stage and needs much more study to be applied. 7,8 Because of this, poly-Si 1 Ϫ x Ge x has been proposed as an alternative gate electrode material.…”

mentioning

confidence: 99%

Effects of Ge Content on the Oxidation Behavior of Poly-Si[sub 1−x]Ge[sub x] Layers for Gate Electrode Application

Ahn¹,

Yeo²,

Kim³

et al. 2001

J. Electrochem. Soc.

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Oxidation characteristics of nonpatterned and patterned poly-SiGe layers were evaluated to confirm the feasibility for the application of poly-SiGe to the gate electrode. Characterization of poly-SiGe after oxidation was performed using atomic force microscopy ͑AFM͒, X-ray photoelectron spectroscopy ͑XPS͒, cross-sectional transmission electron microscopy ͑TEM͒, and energy-dispersive X-ray spectroscopy ͑EDS͒. The oxide thickness on poly-SiGe layer increased with increasing Ge content, while that on poly-SiGe ͑Ge 20%͒ sample was comparable to that of poly-Si ͑Ge 0%͒. When the Ge content was more than 40%, two different oxide layers were observed on poly-SiGe. Intensive analyses revealed that the oxide layers were composed of SiO 2 -rich mixed oxide (SiO 2 ͑GeO 2 ͒) and GeO 2 -rich mixed oxide (GeO 2 ͑SiO 2 ͒͒. For the patterned poly-SiGe sample, the oxidation characteristics were similar to those of nonpatterned sample. The best sidewall oxide profile was obtained in poly-SiGe ͑Ge 20%͒ sample. Because the sidewall oxide thickness is too thick for poly-SiGe sample with more than 40% of Ge, poly-SiGe ͑Ge 20%͒ is believed to be the most suitable candidate for gate electrode material.

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confidence: 99%

Effects of Ge Content on the Oxidation Behavior of Poly-Si[sub 1−x]Ge[sub x] Layers for Gate Electrode Application

Ahn¹,

Yeo²,

Kim³

et al. 2001

J. Electrochem. Soc.

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“…HfO 2 has been widely studied both experimentally and theoretically because of its excellent dielectric properties, wide band gap, high melting point, etc. 1,2 . Moreover, HfO 2 has been proved to be one of the most promising high-dielectric-constant materials, due to its high formation heat and nice thermodynamic stability when it contacts indirectly with Si 3 .…”

Section: Introductionmentioning

confidence: 99%

First-principles generalized gradient approximation (GGA) +U studies of electronic structure and optical properties in cubic ZrO2

et al. 2015

Solid State Communications

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“…However, the high process temperature of thin LPCVD films is expected to cause problems in nanoscale ICs. 5) In the case of films formed by plasmaenhanced chemical vapor deposition (PECVD), serious disadvantages are known, such as poor thickness uniformity. In particular, interlayer dielectric (for example, gate sidewall oxide) films deposited by PECVD have poor interface characteristics between the gate dielectric film and the Si substrate caused by plasma radiation damage.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of Silicon Dioxide Film Deposited by Neutral Beam-Assisted Chemical Vapor Deposition

Lee

et al. 2008

jjap

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Silicon dioxide thin films were deposited on p-type Si(100) substrates by neutral beam-assisted chemical vapor deposition (NBACVD) using SiH 4 and neutralizing N 2 O gases at temperatures ranging from 350 to 450 C. The growth rate of the SiO 2 films deposited by NBACVD increased gradually with increasing deposition temperature. The refractive index of the deposited films is similar to the value of stoichiometric SiO 2 . The properties of the SiO 2 films deposited by NBACVD at temperatures ranging from 350 to 450 C, such as wet etch rate, surface morphology, and leakage current, were superior to those of the SiO 2 films deposited by PECVD at 400 C. For the growth of SiO 2 films, NBACVD is expected to be applied to next-generation semiconductors with low process temperature requirements.

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Boron diffusion and penetration in ultrathin oxide with poly-Si gate

Cited by 77 publications

References 10 publications

Effects of Ge Content on the Oxidation Behavior of Poly-Si[sub 1−x]Ge[sub x] Layers for Gate Electrode Application

Effects of Ge Content on the Oxidation Behavior of Poly-Si[sub 1−x]Ge[sub x] Layers for Gate Electrode Application

First-principles generalized gradient approximation (GGA) +U studies of electronic structure and optical properties in cubic ZrO2

Characteristics of Silicon Dioxide Film Deposited by Neutral Beam-Assisted Chemical Vapor Deposition

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