Boron diffusion in silicon at high concentrations

Abstract

Computational methodology for analysis of the Soret effect in crystals: Application to hydrogen in palladium J. Appl. Phys. 112, 083516 (2012) Spectroscopic analysis of Al and N diffusion in HfO2 J. Appl. Phys. 112, 064118 (2012) Copper centers in copper-diffused n-type silicon measured by photoluminescence and deep-level transient spectroscopy Appl. Phys. Lett. 101, 042113 (2012) Bonding and diffusion of nitrogen in the InSbN alloys fabricated by two-step ion implantation Appl. Phys. Lett. 101, 021905 (2012) Shift of Ag diffusion profiles in CdTe by metal/semiconductor interfaces Appl.Depth ~rofil.es measured by secondary ion mass spectrometry have been used to compare boron d~ffuslOn from three different sources for temperatures ranging from 850 to 1050 °C. The so~rces mcluded boron in sit~ dop.ed and ion-implanted polycrystalline silicon as well as vapor usmg an evacuated capsule wIth hIghly doped powder. The junction depths and surface concentrations demonstrated little source dependence. Boltzmann-Matano analysis has been used to show that the concentration dependence of the diffusivity on source was minimal. We have clearly shown that conventional models of boron diffusion cannot fit the experimental data or the Boltzmann-Matano results, regardless of source. A new model has been used to describe the boron diffusion profiles more accurately.

Role of Defects in the Dopant Diffusion in Si

“…It shows a prominent kink in highconcentration diffusion profiles (Duffy et al, 1968;Tsai, 1969) and was also found to accelerate the diffusion of other dopants separated spatially (Miller, 1960;Yeh, 1962). Similar effects were found for boron, although less pronounced (OrrArienzo et al, 1988).…”

A Model for Boron T.E.D. in Silicon: Full Couplings of Dopant with Free and Clustered Interstitials

“…For this specific case the (G-R) terms linked to the interstitial-related clusters evolution vanish, and such simulations can thus be used to fit the basic parameters describing the dopant interactions with the free point defects. As shown on Figure 1, the agreement between the experimental profiles [4] and the simulated ones, with parameters corresponding to a I contribution to the total B diffusion of the order of 85 %, is remarkably good.…”

“…Comparison between calculated and experimental boron predeposition profiles. Experimental data are from ref [4]. …”

High efficiency screen printed bifacial solar cells on monocrystalline CZ silicon

“…Boron and phosphorus diffusions were performed in a tube furnace employing liquid sources: BBr 3 liquid source for boron and POCl 3 liquid source for phosphorous. To achieve comparable junction characteristics, boron diffusion in Si requires much higher diffusion temperatures than phosphorus diffusion in Si 11, 12. As a means to assure optimum boron and phosphorus diffusion conditions minimizing their impact on the post‐diffusion wafer lifetime, we measured the effective minority carrier lifetime as a function of the excess minority carrier density Δ n (at 10 15 cm −3 injection level) using the quasi‐steady‐state photoconductance (QSS‐PC) technique 13…”