Boron distribution in the subsurface region of heavily doped IIb type diamond

Маврин, Б. Н.; Денисов, В. Н.; Popova, Daria; Скрылева, Е. А.; Кузнецов, М. С.; Nosukhin, S. A.; Terentiev, Sergey; Бланк, В. Д.

doi:10.1016/j.physleta.2008.02.064

Cited by 30 publications

(23 citation statements)

References 17 publications

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“…The principal features of the spectrum are a wide band centered at 600 cm −1 , a peak or a shoulder with a maximum at 1216 cm −1 and an asymmetry peak at 1312 cm −1 . Considering the limitations of the supercell approach in describing the structural disorder and the limited number of boron atoms in our model, the calculated spectrum is in good agreement with the most visible Raman observations in HBDD [16,17]. Fig.…”

Section: Vibrational Propertiessupporting

confidence: 75%

“…In addition, the origin of two new Raman broad bands centered at approximately 500 and 1230 cm −1 are still uncertain [14][15][16][17][18][19]. These bands were attributed to the vibrational density of states (VDOS) of diamond in some papers [14][15][16].…”

Section: Introductionmentioning

confidence: 99%

“…These bands were attributed to the vibrational density of states (VDOS) of diamond in some papers [14][15][16]. There is also evidence [5,12,17] that the 500 cm −1 band may be associated with local vibrational modes of boron dimers in which boron would preferentially aggregate at high concentrations.…”

Section: Introductionmentioning

confidence: 99%

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First principles study of structural, electronic and vibrational properties of heavily boron-doped diamond

et al. 2009

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Section: Vibrational Propertiessupporting

confidence: 75%

Section: Introductionmentioning

confidence: 99%

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First principles study of structural, electronic and vibrational properties of heavily boron-doped diamond

et al. 2009

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“…Obviously, the development of such components is conditioned by the availability of heavily‐doped diamond substrates (doping level around 10 20 cm −3 ) with a thickness allowing mechanical handling. So far, only substrates produced by the High Pressure High Temperature technique exhibited such characteristics but the low doping homogeneity and purity 6 of this material severely limits the electrical conductivity 7. As for CVD technique, the only doped substrates presented in the literature 1, 8 had a doping level below 2 × 10 19 cm −3 which also strongly limits their electrical conductivity.…”

Section: Introductionmentioning

confidence: 99%

Freestanding CVD boron doped diamond single crystals: A substrate for vertical power electronic devices?

Achard

Issaoui

Tallaire

et al. 2012

Physica Status Solidi (a)

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The development of ‘all‐diamond’ devices for power electronics is attracting more and more interest as judged by the recent increase in the number of publications on the subject. Nevertheless most devices reported in the literature used coplanar or pseudo‐vertical geometries which, although promising in term of breakdown voltage, have still a relatively high on‐state resistance. This could be related to current crowding due the low cross‐section p+ layer. Vertical configuration, which requires thick heavily doped substrates, is a possible alternative usually used in conventional semiconductors. In this study, chemical vapour deposition (CVD) diamond growth conditions allowing heavy boron doping over an important thickness are discussed. It was found that there is an optimal range of microwave power density (MWPD) for which reasonable doping efficiencies and growth rates can be obtained leading to hundreds of micrometers thick crystals with a doping level higher than 1020 cm−3. The crystal morphology was predicted thanks to a 3D geometrical model and a small addition of oxygen to the gas phase was efficient to avoid the appearance of undesirable crystals faces and keep the crystal integrity. Freestanding boron‐doped diamond single crystals were eventually grown and characterized by secondary ion mass spectrometry (SIMS), Fourier transformed InfraRed (FTIR) spectroscopy, Raman spectroscopy, high resolution X‐ray diffraction (HRXRD) and four‐point probe measurements. The high quality of the synthetic crystals was confirmed exhibiting electrical resistivities as low as 0.26 Ω cm illustrating that this material is suitable for the development of vertical power electronic devices.

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“…In the whole, the evolution of Raman spectra of diamond with boron doping reflects an inhomogeneous distribution of boron in diamond, especially in polycrystalline material. The ability of {111}, {110} and {100} diamond facets to adopt boron differently [8] and uneven incorporation of boron in the same growth sector [9] cause some non-uniformity in the impurity doping of the material. With a specific Raman signal polarization different from that of the "1225" band, the band at "500 cm " was suggested to originate from vibrations of boron pairs [7,10].…”

Section: Introductionmentioning

confidence: 99%

Superconductivity in diamond induced by boron doping at high pressure

Екимов

Sidorov

Zoteev

et al. 2009

Physica Status Solidi (b)

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The application of hydrostatic pressure to boron‐doped diamond samples produces a linear decrease in the superconducting transition temperature Tc. The values d ln Tc/dP obtained for samples with different Tc's collapse near an average value –2 × 10–2 GPa–1, which is in reasonable agreement with theoretical predictions based on an electron–phonon mechanism of superconductivity in diamond within the virtual crystal approximation [Y. Ma et al., Phys. Rev. B 72, 014306 (2005)]. For the first time, superconducting boron‐doped diamond samples were synthesized with 10B and 13C isotopes. Isotopic substitution permits us to relate almost all bands in the Raman spectra of heavily boron‐doped diamond with the vibrations of carbon atoms. The “500 cm–1” Raman band shifts with both carbon and boron isotope substitutions and is associated with vibrations of clustered boron. We claim the presence of a carbon isotope effect in superconducting diamond. This fact supports the importance of the electron–phonon interaction as the mechanism of superconductivity in diamond. The value of the isotope effect coefficient is β0 = –d ln Tc/d ln M = 0.5 ± 0.3. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Boron distribution in the subsurface region of heavily doped IIb type diamond

Cited by 30 publications

References 17 publications

First principles study of structural, electronic and vibrational properties of heavily boron-doped diamond

First principles study of structural, electronic and vibrational properties of heavily boron-doped diamond

Freestanding CVD boron doped diamond single crystals: A substrate for vertical power electronic devices?

Superconductivity in diamond induced by boron doping at high pressure

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