Boron doped hydrogenated nanocrystalline silicon thin films prepared by layer-by-layer technique and its application in n-i-p flexible amorphous silicon thin film solar cells

Tao, Ke; Zhang, Dexian; Sun, Yun; Wang, Linshen; Zhao, Jingfang; Xue, Ying; Jiang, Yuanjian; Cai, Hongkun; Sui, Yanping; Wang, Jin

doi:10.1109/nems.2009.5068588

Cited by 3 publications

(3 citation statements)

References 9 publications

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“…There is a general consensus among the research community to employ ptype layers of high conductivity and high crystallinity, which would benefit to reduce the thickness of the underlying layers as well as improve the characteristics of the p/i interfaces [16]. Hydrogenated nanocrystalline silicon (nc-Si:H) thin films have attracted considerable interest in the last few years and several works have been reported in the literature with its potential application in thin-film photodiodes and solar cells [17][18][19]. The nc-Si:H is a mixed-phase material that consists of nanometre-size crystals embedded within the amorphous silicon domain [18].…”

Section: Introductionmentioning

confidence: 99%

“…Hydrogenated nanocrystalline silicon (nc-Si:H) thin films have attracted considerable interest in the last few years and several works have been reported in the literature with its potential application in thin-film photodiodes and solar cells [17][18][19]. The nc-Si:H is a mixed-phase material that consists of nanometre-size crystals embedded within the amorphous silicon domain [18]. The size of such nano-crystals depends on the relevant deposition parameters and conditions [17][18][19].…”

Section: Introductionmentioning

confidence: 99%

“…The nc-Si:H is a mixed-phase material that consists of nanometre-size crystals embedded within the amorphous silicon domain [18]. The size of such nano-crystals depends on the relevant deposition parameters and conditions [17][18][19]. Boron-doped nc-Si:H is a wide band gap material of 1.9-2.1 eV [20,21] and offers better charge transport properties along with enhanced electrical conductivity [17,22].…”

Section: Introductionmentioning

confidence: 99%

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Modelling and performance analysis of amorphous silicon solar cell using wide band gap nc‐Si:H window layer

Mehmood

Tauqeer

2017

IET Circuits, Devices & Syst

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Poor charge transport mechanism and light-induced degradation effects are among the key factors leading to the degraded performance of single-junction amorphous silicon (a-Si:H) solar cells. Existent photovoltaic configurations, based on amorphous silicon carbide (a-SiC:H) window layer, have established efficiencies in the range of 7-10%. Limited performance of such devices has been addressed by replacing a-SiC:H with a wide band gap (∼2 eV) hydrogenated nano-crystalline silicon (nc-Si:H) layer that reportedly exhibits crystalline properties at small scale. Here, the proposed solar cell based on p-nc-Si:H/i-a-Si:H (buffer)/i-a-Si:H/n-a-Si:H configuration has been simulated with SILVACO TCAD by analysing window and intrinsic absorber layers thickness, as well as doping concentrations. Along with the engineering of p/i interface, in-depth evaluation of absorber defects parameters has also been undertaken in order to reduce the recombination rate. The simulated results of an optimised single-junction device demonstrated an open-circuit voltage (VOC) of 0.865 V, short-circuit current density (JSC) of 21.7 mA/ cm 2 , Fill factor (FF) of 0.69 and power conversion efficiency of 12.93%, which is promising when compared with the solar cell already reported. The proposed structure will provide the platform for further development of low cost and efficient multijunction thin-film amorphous solar cell technology.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Modelling and performance analysis of amorphous silicon solar cell using wide band gap nc‐Si:H window layer

Mehmood

Tauqeer

2017

IET Circuits, Devices & Syst

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Forward bias capacitance spectroscopy for characterization of semiconductor junctions: Application to a-Si:H p-i-n diode

Anutgan¹,

Atilgan²

2013

Appl. Phys. Lett.

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Fabrication of Flexible Amorphous-Si Thin-Film Solar Cells on a Parylene Template Using a Direct Separation Process

Wuu

Chang

et al. 2011

IEEE Trans. Electron Devices

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In this paper, we report on the fabrication of flexible amorphous-silicon (a-Si) thin-film solar cells on a parylene template carried by a glass plate without any adhesive. The a-Si thin-film solar cells could be separated directly from the glass carrier after a process temperature of up to 200 degrees C. The a-Si and parylene films were deposited using high-frequency plasma-enhanced chemical vapor deposition and a parylene reactor. The parylene-coated glass plate was treated with thermal annealing and Ar, N(2), or O(2) plasma. Moreover, SiN(x) and/or SiO(x) films were used as barrier layers between the transparent conductive oxide and parylene films. Details of different gas plasmas and barrier effects were investigated in terms of surface morphologies and solar cell characteristics. The a-Si thin-film solar cell on a parylene template with an open-circuit voltage of 0.74 V, a short-circuit current density of 15.69 mA/cm(2), a fill factor of 54.98%, and a conversion efficiency of 5.78 % could be obtained. After the 10-mm-radius bending test for 5000 times, the a-Si thin-film solar cells still exhibited a conversion efficiency of 4.94%. These results indicated that a-Si thin-film solar cells on parylene templates have high potential for flexible photovoltaic applications

show abstract

Boron doped hydrogenated nanocrystalline silicon thin films prepared by layer-by-layer technique and its application in n-i-p flexible amorphous silicon thin film solar cells

Cited by 3 publications

References 9 publications

Modelling and performance analysis of amorphous silicon solar cell using wide band gap nc‐Si:H window layer

Modelling and performance analysis of amorphous silicon solar cell using wide band gap nc‐Si:H window layer

Forward bias capacitance spectroscopy for characterization of semiconductor junctions: Application to a-Si:H p-i-n diode

Fabrication of Flexible Amorphous-Si Thin-Film Solar Cells on a Parylene Template Using a Direct Separation Process

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