“…27 Meanwhile, SiGe/Si is a novel material used for infrared applications, and it is sought as an alternative material to VO x and amorphous Si due to its crystalline phase for low signal noise. 28,29 According to eq 2, TCR can be increased by adjusting the barrier energy, V, and also the position of E f . Therefore, to have a high TCR value in the SiGe/Si structure, a high Ge content is required, whereas the E f position is related to the SiGe layers being intrinsic or lowly doped.…”