2013
DOI: 10.1016/j.infrared.2013.01.005
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Boron-doped nanocrystalline silicon germanium thin films for uncooled infrared bolometer applications

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Cited by 13 publications
(2 citation statements)
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“…27 Meanwhile, SiGe/Si is a novel material used for infrared applications, and it is sought as an alternative material to VO x and amorphous Si due to its crystalline phase for low signal noise. 28,29 According to eq 2, TCR can be increased by adjusting the barrier energy, V, and also the position of E f . Therefore, to have a high TCR value in the SiGe/Si structure, a high Ge content is required, whereas the E f position is related to the SiGe layers being intrinsic or lowly doped.…”
Section: ■ Introductionmentioning
confidence: 99%
“…27 Meanwhile, SiGe/Si is a novel material used for infrared applications, and it is sought as an alternative material to VO x and amorphous Si due to its crystalline phase for low signal noise. 28,29 According to eq 2, TCR can be increased by adjusting the barrier energy, V, and also the position of E f . Therefore, to have a high TCR value in the SiGe/Si structure, a high Ge content is required, whereas the E f position is related to the SiGe layers being intrinsic or lowly doped.…”
Section: ■ Introductionmentioning
confidence: 99%
“…Due to the high level of rarefaction, the simulation of gas flow in a micro-cavity that encloses an array of microbolometers 15 is much more challenging than in the classical flow regimes: the low number of gas molecules encapsulated in the considered domain make their mean free path much longer than usual, so the diffusive description used in the continuum approach (Navier-Stokes equations) ceases to be valid. The degree of rarefaction of a gas in such micro-systems is generally defined by the Knudsen parameterwhere λ is the mean free path of the molecule and L the characteristic dimension of the system.…”
Section: Introductionmentioning
confidence: 99%