Boron-enhanced-diffusion of boron: The limiting factor for ultra-shallow junctions

Agarwal, Aditya; Eaglesham, D. J.; Gossmann, H.‐J.; Pelaz, Lourdes; Herner, S. B.; Jacobson, D. C.; Haynes, T. E.; Erokhin, Yu. E.; Simonton, Robert B.

doi:10.1109/iedm.1997.650425

Cited by 44 publications

(23 citation statements)

References 2 publications

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“…Nevertheless, different interpretations and some controversies appeared in the literature. [1][2][3] In this letter we give a further contribution regarding the diffusion of B implanted with energies lower than 1 keV.…”

Section: ͓S0003-6951͑99͒02939-3͔mentioning

confidence: 99%

Microscopical aspects of boron diffusion in ultralow energy implanted silicon

Napolitani

Carnera

Schroer³

et al. 1999

Applied Physics Letters

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The transient enhanced diffusion of ultralow energy implanted B is reported in this letter. The mechanism giving rise to an enhancement of the diffusion during postimplantation anneal is investigated in detail by monitoring the diffusion of B as a function of temperature in the range 600–750 °C, for implant energies of 500 eV and 1 keV. The contribution of several classes of defect clusters to the anomalous diffusion phenomenon has been detected and interpreted. Both an ultrafast diffusion, occurring during the ramp-up of the thermal process, and a transient enhancement of the diffusion with characteristic decay times shorter by orders of magnitude than the known transient enhanced diffusion lifetimes, have been evidenced. The activation energy for the enhanced diffusion has been measured and found to be 1.7 eV.

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Section: ͓S0003-6951͑99͒02939-3͔mentioning

confidence: 99%

Microscopical aspects of boron diffusion in ultralow energy implanted silicon

Napolitani

Carnera

Schroer³

et al. 1999

Applied Physics Letters

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“…A recent study by Agarwal et al has found evidence of the formation of solid phase SiB 4 once boron concentrations have exceeded ϳ6%. 26 However, in this study the peak concentration for the substrate subjected to the highest BF 2 dose did not exceed ϳ0.6%; therefore SiB 4 formation would not be anticipated. Boron precipitation or clustering, 27,28 however, may have formed since the solid solubility of boron in silicon at 950ЊC is reported to be only ϳ1 ϫ 10 20 cm Ϫ3 .…”

Section: Resultsmentioning

confidence: 82%

Growth of Selective Silicon Epitaxy Using Disilane and Chlorine on Heavily Implanted Substrates: I. Role of Implanted BF 2

O’Neil¹,

Öztürk²,

Batchelor

et al. 1999

J. Electrochem. Soc.

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In this report, we present results on the low thermal budget deposition of selective silicon epitaxy on heavily BF 2 implanted substrates using Si 2 H 6 and Cl 2 in an ultrahigh vacuum rapid thermal chemical vapor deposition reactor. Si growth kinetics, selectivity to SiO 2 , dopant incorporation, and epitaxial quality have been investigated for varying implant dose conditions and varying levels of chlorine during processing. Contrary to published reports, no significant selectivity degradation mechanism has been observed for oxides implanted, and therefore, damaged by BF 2 ions. Additionally, with heavily implanted boron substrates no reduction in silicon growth occurred despite the presence of a hydrophilic substrate surface just prior to epitaxial growth. Although the hydrophilic surface did not affect the silicon growth rate, the epitaxial defect density did increase with increasing implant dose and chlorine flow rate during processing. The nature of these defects has been studied using atomic force microscopy and transmission electron microscopy. The incorporation of boron into the deposited epitaxial films has been investigated and abrupt profiles or intentionally diffuse structures were achieved through variation of the process sequence and annealing conditions.

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“…In contrast to the reduction in enhancement to 1x obser~cd for ULE Si-, a saturation in the reduction of diffusivity enhancement at 4x is seen for the B. implants at 1 and 0.5 keV (Fig. 7) [18]). …”

Section: Ts(t)= Tf+(ti -Tf)exp[-(t/t)p]mentioning

confidence: 76%

Ion Implantation Processing Technologies for Telecommunications Electronics

Haynes¹

2000

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Boron-enhanced-diffusion of boron: The limiting factor for ultra-shallow junctions

Cited by 44 publications

References 2 publications

Microscopical aspects of boron diffusion in ultralow energy implanted silicon

Microscopical aspects of boron diffusion in ultralow energy implanted silicon

Growth of Selective Silicon Epitaxy Using Disilane and Chlorine on Heavily Implanted Substrates: I. Role of Implanted BF 2

Ion Implantation Processing Technologies for Telecommunications Electronics

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