Boron-hydrogen complexes in crystalline silicon

Herrero, Carlos P.; Stutzmann, M.; Breitschwerdt, A.

doi:10.1103/physrevb.43.1555

Cited by 68 publications

(32 citation statements)

References 63 publications

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“…It has a vibrational mode with a frequency of 1903 cm Ϫ1 at low temperature which may be observed by infrared-absorption measurements 11 or Raman scattering. 14 The location of the hydrogen atom is between the B acceptor and a neighboring Si atom ͑the bond-center configuration͒, as suggested originally by Pankove et al 15 This location is confirmed by channeling studies 16,17 and several theoretical calculations which find that the bond-center structure has lowest energy. [18][19][20][21][22][23] Uniaxial-stress perturbations of the 1903-cm Ϫ1 line have established that it is due to an A 1 mode in the C 3v point group.…”

Section: Introductionmentioning

confidence: 62%

Al-H and Al-D complexes in Si: A uniaxial-stress study of the hydrogen vibrational modes

Stavola

Davies

1996

Phys. Rev. B

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Perturbation of the 2201-cm Ϫ1 absorption line of the Al-H complex in Si by uniaxial stress is shown to be consistent with a stretching mode of a center with an effectively trigonal symmetry. Quantitative analyses of the effects of the stresses and of varying the temperature reveal the presence of a very-low-frequency transverse mode which transforms as the E irreducible representation in the trigonal symmetry. Its frequency is 64 cm Ϫ1 in the ground state of the stretching mode ͑representation A 1 ͒. An A 1 ϩE combination mode, observed only under stress, lies 24 cm Ϫ1 above the excited state of the A 1 mode. Upon substituting D for H, the frequencies of the stretching and transverse modes are reduced by approximately a factor of 1/&, as expected for vibrations which predominantly involve the H ͑D͒ atom. The symmetries of the center and of its modes are unchanged by the isotopic substitution. The Al-H axis may be preferentially aligned along one of the ͗111͘ axes by an applied stress. The barrier to reorientation is ϳ370 meV. ͓S0163-1829͑96͒03139-6͔

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Section: Introductionmentioning

confidence: 62%

Al-H and Al-D complexes in Si: A uniaxial-stress study of the hydrogen vibrational modes

Stavola

Davies

1996

Phys. Rev. B

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“…The features of the depth profile of the H concentration are in good agreement with earlier SIMS results for B-doped Si. 23 In the case of B-doped Si, positively charged H atoms are effectively trapped by negatively charged B, and therefore the depth profile of the H is similar to that of B. 7,23 With increasing hydrogenation duration, the concentration of H exceeds that of B by several times.…”

Section: Dependence On Hydrogenation Temperature and Durationmentioning

confidence: 99%

“…23 In the case of B-doped Si, positively charged H atoms are effectively trapped by negatively charged B, and therefore the depth profile of the H is similar to that of B. 7,23 With increasing hydrogenation duration, the concentration of H exceeds that of B by several times. This result suggests the formation of H-related complexes in addition to the H-B passivation center.…”

Section: Dependence On Hydrogenation Temperature and Durationmentioning

confidence: 99%

Formation of hydrogen-boron complexes in boron-doped silicon treated with a high concentration of hydrogen atoms

et al. 2005

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The formation of hydrogen ͑H͒ related complexes and their effect on boron ͑B͒ dopant were investigated in B-ion implanted and annealed silicon ͑Si͒ substrates treated with a high concentration of H. Isotope shifts by replacement of 10 B with 11 B were observed for some H-related Raman peaks, but not for other peaks. This shows proof of the formation of B-H complexes in which H directly bonds to B in Si. This is an experimental result concerning the formation of B-H complexes with H bonded primarily to B. Electrical resistivity measurements showed that the B acceptors are passivated via the formation of the observed B-H complexes, as well as the well-known passivation center in B-doped Si; namely, the H-B passivation center.

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“…This loss of transparency has been already described in the case of chemisorption of NO 2 and NH 3 at the surface of m-PS and assigned to the reactivation (or formation) of carriers in the material. Other authors [19,20] have reported an increase of conductivity of p + PS after annealing at 423-473 K, which was ascribed to the evolution of non-surface hydrogen species. In the present case, changes in carrier concentration occur at higher temperatures, at which the amount of desorbed H 2 is rather substantial [11].…”

Section: Pyrex Connectionmentioning

confidence: 95%

Carriers reactivation in p ⁺ ‐type porous silicon accompanies hydrogen desorption

Rivolo

Geobaldo

Salvador

et al. 2005

phys. stat. sol. (c)

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PACS 78.40.Fy, 78.40.Pg, 81.07.Bc, 82.45.Vp FTIR spectra of p + -type mesoporous silicon (m-PS) outgassed in the 300-600 K range show a loss of transparency with increasing temperature, more pronounced at low frequencies. This is evidence of freecarrier formation. Previous work (F. Geobaldo et al., Sensors and Actuators B, in press [1]) concerning the reversible interaction of NO 2 and NH 3 has shown the presence at the surface of adsorption sites involving Si/B pairs. Thermal treatment of the sample causes desorption of molecular hydrogen, released through the homolytic splitting of Si-H bonds. Besides meeting each other forming a H 2 molecule, H atoms may interact with an adsorption site, by creating a new H-Si-B bond. This new bond needs one additional electron to be formed and injection of a hole takes place into the solid. At higher temperatures, surface hydrogen is almost totally removed and the sample transparency recovered.

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Boron-hydrogen complexes in crystalline silicon

Cited by 68 publications

References 63 publications

Al-H and Al-D complexes in Si: A uniaxial-stress study of the hydrogen vibrational modes

Al-H and Al-D complexes in Si: A uniaxial-stress study of the hydrogen vibrational modes

Formation of hydrogen-boron complexes in boron-doped silicon treated with a high concentration of hydrogen atoms

Carriers reactivation in p ⁺ ‐type porous silicon accompanies hydrogen desorption

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Boron-hydrogen complexes in crystalline silicon

Cited by 68 publications

References 63 publications

Al-H and Al-D complexes in Si: A uniaxial-stress study of the hydrogen vibrational modes

Al-H and Al-D complexes in Si: A uniaxial-stress study of the hydrogen vibrational modes

Formation of hydrogen-boron complexes in boron-doped silicon treated with a high concentration of hydrogen atoms

Carriers reactivation in p + ‐type porous silicon accompanies hydrogen desorption

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Carriers reactivation in p ⁺ ‐type porous silicon accompanies hydrogen desorption