Boron isotope effect on the thermal conductivity of boron arsenide single crystals

Sun, Haoran; Chen, Ke; Gamage, Geethal Amila; Ziyaee, Hamidreza; Wang, Fei; Wang, Yu; Hadjiev, V. G.; Tian, Fei; Chen, Gang; Ren, Zhifeng

doi:10.1016/j.mtphys.2019.100169

Cited by 17 publications

(9 citation statements)

References 32 publications

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“…It has been found that laser excitations can produce Raman scattering from electronic excitations, which is called electronic Raman scattering (ERS). ERS produces a scattering background and a Fano line shape of Raman peaks, which have been found in previous Raman studies on BAs. , Moreover, ERS enables observation of the correlation between hole concentration and κ in BAs . A similar correlation has been established for our samples, as shown in Figure b.…”

Section: Resultssupporting

confidence: 84%

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Effects of Impurities on the Thermal and Electrical Transport Properties of Cubic Boron Arsenide

Chen

et al. 2021

Chem. Mater.

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Cubic boron arsenide (BAs) is a promising compound semiconductor for thermal management applications due to its high thermal conductivity, exceeding 1000 W m–1 K–1 at room temperature in high-quality samples. However, the as-grown BAs crystals usually exhibit large variations in thermal and electronic transport properties. The origin of these large variations has thus far been inconclusive. Here, we investigate the effects of impurities on the thermal and electrical properties of BAs. Time-of-flight secondary ion mass spectrometry and electron probe microanalysis measurements reveal the presence of several impurities in BAs, including Si, C, O, H, Te, Na, and I. Some of these impurities, especially Si, C, and H, could serve as shallow acceptors, leading to the p-type conducting behavior commonly measured in BAs. The thermal conductivity and hole mobility are reduced more in the samples with higher impurity concentrations due to the enhanced impurity scattering of phonons and holes, respectively. First-principles calculations are used to determine the thermal conductivity reduction induced by different impurities. The calculated results confirm the experimental trends. The substitution of O for As leads to a large bond distortion resulting from the breaking of the T d symmetry, which yields unusually strong phonon scattering with a correspondingly large reduction in thermal conductivity. Our results offer useful insights into the impurity-sensitive transport properties of BAs.

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Section: Resultssupporting

confidence: 84%

“…ERS produces a scattering background and a Fano line shape of Raman peaks, which have been found in previous Raman studies on BAs. 8,38 Moreover, ERS enables observation of the correlation between hole concentration and κ in BAs. 8 A similar correlation has been established for our samples, as shown in Figure 3b.…”

Section: Resultsmentioning

confidence: 99%

Effects of Impurities on the Thermal and Electrical Transport Properties of Cubic Boron Arsenide

Chen

et al. 2021

Chem. Mater.

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“…Samples made of different boron sources had different characteristic Raman peaks. [ 50 ] X‐ray diffraction and Raman scattering data on our samples in Figure S1, Supporting Information, were included.…”

Section: Methodsmentioning

confidence: 99%

“…Further details about the synthesis can be found in Refs. [49,50] The authors used various boron sources in the synthesis processes. Sample A (≈1100 W m −1 K −1 ) was grown with 10 B isotopes, Sample B (≈600 W m −1 K −1 ) was grown with nat B particles (19.9% 10 B and 80.1% 11 B), and Sample C (≈350 W m −1 K −1 ) was grown with 11 B isotopes.…”

Section: Methodsmentioning

confidence: 99%

Thermal Conductivity of BAs under Pressure

Hou

Sun

Tian

et al. 2022

Adv Elect Materials

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The thermal conductivity of boron arsenide (BAs) is believed to be influenced by phonon scattering selection rules due to its special phonon dispersion. Compression of BAs leads to significant changes in phonon dispersion, which allows for a test of first principles theories for how phonon dispersion affects three‐ and four‐phonon scattering rates. This study reports the thermal conductivity of BAs from 0 to 30 GPa. Thermal conductivity vs. pressure of BAs is measured by time‐domain thermoreflectance with a diamond anvil cell. In stark contrast to what is typical for nonmetallic crystals, BAs is observed to have a pressure independent thermal conductivity below 30 GPa. The thermal conductivity of nonmetallic crystals typically increases upon compression. The unusual pressure independence of BAs's thermal conductivity shows the important relationship between phonon dispersion properties and three‐ and four‐phonon scattering rates.

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“…Engineering of phonon topology is one of the main strategies to manipulate thermal properties through phonon engineering besides doping [22], creating solid solution [23], isotopic engineering [24,25] and nanostructuring [26,27] Many novel properties, such as low thermal conductivity [28][29][30], negative thermal expansion [31], and anomalous phase transitions [32], can be attributed to exotic phonon dispersion topology, e.g., crossing/anticrossing behaviors [28,29] bunched acoustic phonon, and dispersion waterfall [33]. Recently, local phonon dispersion nesting behaviors have been shown to augment acoustic-optical three-phonon scattering channels, amplify anharmonicity, and suppress lattice thermal transport [34,35].…”

mentioning

confidence: 99%

Matryoshka phonon twinning in α-GaN

et al. 2021

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Understanding lattice dynamics is crucial for effective thermal management in electronic devices because phonons dominate thermal transport in most semiconductors. α-GaN has become a focus of interest as one of the most important third-generation power semiconductors, however, the knowledge on its phonon dynamics remains limited. Here we show a Matryoshka phonon dispersion of α-GaN with the complementary inelastic X-ray and neutron scattering techniques and the first-principles calculations. Such Matryoshka twinning throughout the basal plane of the reciprocal space is demonstrated to amplify the anharmonicity of the related phonons through creating abundant three-phonon scattering channels and cutting the lifetime of affected modes by more than 50%. Such phonon topology contributes to reducing the in-plane thermal transport, thus the anisotropic thermal conductivity of α-GaN. The results not only have implications for engineering the thermal performance of α-GaN, but also offer valuable insights on the role of anomalous phonon topology in thermal transport of other technically semiconductors.

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Boron isotope effect on the thermal conductivity of boron arsenide single crystals

Cited by 17 publications

References 32 publications

Effects of Impurities on the Thermal and Electrical Transport Properties of Cubic Boron Arsenide

Effects of Impurities on the Thermal and Electrical Transport Properties of Cubic Boron Arsenide

Thermal Conductivity of BAs under Pressure

Matryoshka phonon twinning in α-GaN

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