Boron – Oxygen – Silicon

P–N Junction Diode Using Plasma Boron-Doped Black Phosphorus for High-Performance Photovoltaic Devices

“…The X-ray photoelectron spectroscopy (XPS) spectra of the samples were obtained at the sequential pulsed time (interval: 5 s) of the plasma process to determine the reaction with BP surface species. The chemical bonding states extracted from the XPS results show the relationship of boron atoms with BP (O–B–P, B–B, and B–P binding states) in the plasma boron-doped BP surface region (detection angle = 45°). − A Shirley background subtraction was performed for the curve fitting of the XPS data, and all spectra were charge-compensated relative to the binding energy of the C–C bond (284.5 eV). The results of the XPS curve fitting clearly showed that the concentrations of the hybridized B–P species in the pulsed-plasma boron-doped film increased with increasing process time of up to 30 s. On the contrary, the oxidized peak from O–B–P increased by a relatively large amount after the process time was extended to 35 s compared with those of a process time of up to 30 s. In addition, to confirm the doping effect and plasma damage with the BP surface, fitting for the P 2p core-level spectra was performed, as shown in Figure b.…”