Boron penetration studies from p+ polycrystalline Si through HfSixOy

Quevedo‐Lopez, Manuel; El-Bouanani, M.; Kim, M. J.; Gnade, Bruce E.; Wallace, Robert M.; Visokay, M.R.; Li-Fatou, A.; Bevan, M. J.; Colombo, Luigi

doi:10.1063/1.1498872

Cited by 52 publications

(28 citation statements)

References 15 publications

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“…Silicates with low concentrations of the Hf cation ($2-8%) are shown to retain their amorphous structure and demonstrate interface stability with silicon to temperatures of 1050°C [149]. Hafnium silicate dielectrics with a $0.52 Si/Hf ratio are shown to resist boron penetration up to 950°C [182]. It is believed that after the phase separation and crystallization occurs, grain boundary diffusion is responsible for the onset of enhanced B diffusivity compared to pure SiO 2 dielectrics.…”

Section: Hf-based Oxides Gate Dielectricsmentioning

confidence: 97%

Integrations and challenges of novel high-k gate stacks in advanced CMOS technology

Zhu

Sun

et al. 2011

Progress in Materials Science

136

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Section: Hf-based Oxides Gate Dielectricsmentioning

confidence: 97%

Integrations and challenges of novel high-k gate stacks in advanced CMOS technology

Zhu

Sun

et al. 2011

Progress in Materials Science

136

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“…However, considering that the process temperature for the activation of impurities in the source/drain of MOSFET is as high as 1,000°C, the capability of Hf silicate as a diffusion barrier is insufficient. Moreover, it is reported that phosphorous and arsenic diffused through the HfSiO with the same Hf concentration during 1,000°C rapid thermal annealing (RTA) [80]. Such impurity diffusion is ascribed to the enhanced diffusion at the grain boundaries formed in the resultant 'phase separation phenomena' in HfSiO at high temperatures [79,80] as described below.…”

Section: Hafnium-nitrogen-based Gate Dielectricsmentioning

confidence: 95%

“…SiO 2 incorporation is also effective for suppressing the impurity penetration phenomena, which are problematic when poly-Si gate electrode is used. Boron diffusion through the HfSiO film with the Hf/Hf+Si ratio of 0.52 (atomic concentration of Hf is about 10-12 %) is suppressed up to 950°C [79]. However, considering that the process temperature for the activation of impurities in the source/drain of MOSFET is as high as 1,000°C, the capability of Hf silicate as a diffusion barrier is insufficient.…”

Section: Hafnium-nitrogen-based Gate Dielectricsmentioning

confidence: 98%

Hafnium-Based Gate Dielectric Materials

Nishiyama

2013

High Permittivity Gate Dielectric Materials

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In this chapter, we focus on hafnium-based gate dielectrics. HfO 2 is regarded as the most promising material for the high-k gate dielectrics owing to its large dielectric constant and large band-gap energy. In the first part of this chapter, these characteristics are addressed in a comparison with SiO 2 and other high-k materials. Thermal stability is a major issue for the application of high-k materials to MOSFETs in LSIs. Although HfO 2 satisfies this requirement, severer process conditions may cause problems even with this material. Suppression of these issues is also addressed in the second part of this chapter. In order to enhance the characteristics of HfO 2 , transformation of the monoclinic phase to the tetragonal and the cubic phases with larger dielectric constant has been pursued recently. We mention the issue in the last part of this chapter. Introductory Remarks and Brief Outline of the ChapterSince the proposal of the materials in the early 2000s [1-3], hafnium-based gate dielectrics have been regarded as the most promising materials for the application to large scale integrations (LSIs). In 2007, Intel announced the start of manufacturing of 45 nm-node LSIs with high-k/metal gate stack, with the remark that the world's first high-k material in commercial production was hafnium-based [4].There are several characteristics that the high-k materials should meet for the application to metal oxide semiconductor field effect transistors (MOSFETs) in LSIs. First, we clarify the properties so that readers can understand their A. Nishiyama

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“…However, dopant penetration from the poly-Si through the crystallized high-k gate dielectrics during high-temperature annealing results in unstable electrical characteristics. Quevedo-Lopez et al 2 recently reported that phosphorus ͑P͒ penetrates through crystalline HfSi x O y into the Si substrate after rapid thermal annealing ͑RTA͒ at 1050°C whereas P penetration was largely reduced when amorphous HfSi x O y N z films were used.…”

Section: Phosphorus Ion Implantation Andmentioning

confidence: 97%

Phosphorus ion implantation and POCl3 doping effects of n+-polycrystalline-silicon/high-k gate dielectric (HfO2 and Al2O3) films

Lee

Choi

Cho

et al. 2004

Applied Physics Letters

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Phosphorus (P)-doped polycrystalline-silicon gate/HfO2 or HfO2–Al2O3/p-type Si (100) metal–oxide–semiconductor capacitors were fabricated using either a POCl3 diffusion or an ion implantation technique to investigate the relationship between P penetration and the electrical properties of the high-k gate dielectric stacks. The HfO2–Al2O3 bilayer showed higher P diffusion blocking properties as a result of the 4.1-nm-thick amorphous interface layer including Al2O3 (or Al-silicate). The P ion-implanted sample with the HfO2–Al2O3 bilayer sample had the smallest leakage current density of −8.8×10−10 A/cm2 at −1 V, which was due to the lower P penetration, and the higher trap depth of approximately 1.3±0.02 eV compared to 0.9±0.02 eV of the sample with only HfO2. However, the P doping by POCl3 diffusion was too excessive and only very leaky devices were produced.

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Boron penetration studies from p+ polycrystalline Si through HfSixOy

Cited by 52 publications

References 15 publications

Integrations and challenges of novel high-k gate stacks in advanced CMOS technology

Integrations and challenges of novel high-k gate stacks in advanced CMOS technology

Hafnium-Based Gate Dielectric Materials

Phosphorus ion implantation and POCl3 doping effects of n+-polycrystalline-silicon/high-k gate dielectric (HfO2 and Al2O3) films

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