Boron Redistribution During Crystallization of Phosphorus-Doped Amorphous Silicon

Abstract

The redistribution of boron has been studied during solid phase crystallization (SPC) of a homogeneous phosphorus-doped amorphous silicon layer deposited by low pressure chemical vapor deposition, for different thermal annealing. We show that for the lower temperature annealing (T = 586 °C, 1h) boron diffuses without changing the P profile, while for the higher temperature annealing (T = 800 °C, 3h), the initially homogeneous P profile is modified, showing two concentration peaks.