2020
DOI: 10.1039/d0cp00121j
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Boron-terminated diamond (100) surfaces with promising structural and electronic properties

Abstract: Boron coverages on diamond (100) surfaces with varying configurations show novel electron affinity property.

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Cited by 24 publications
(13 citation statements)
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“…A comprehensive global surface structure search was firstly performed on pristine c-BN(100) surface, with surface atom coverage of 1 monolayer. The reconstructed 24 and functionalized diamond (100) surfaces [25][26][27] have been successfully predicted by the surface module of CALYPSO code. By CALYPSO calculations, the two types of atoms in c-BN offer the possibility of forming the N-rich and B-rich surfaces.…”
Section: Pristine C-bn(100) Surfacementioning
confidence: 99%
“…A comprehensive global surface structure search was firstly performed on pristine c-BN(100) surface, with surface atom coverage of 1 monolayer. The reconstructed 24 and functionalized diamond (100) surfaces [25][26][27] have been successfully predicted by the surface module of CALYPSO code. By CALYPSO calculations, the two types of atoms in c-BN offer the possibility of forming the N-rich and B-rich surfaces.…”
Section: Pristine C-bn(100) Surfacementioning
confidence: 99%
“…OTD has been seen to possess a PEA of up to 2.7 and 3.8 eV with large adsorption energies per atom in the case of ether and ketone terminations, respectively. , Experimentally, we have found the PEA value of 0.89 eV per atom for OTD . This has resulted in O being studied as a potential candidate in quantum sensing and electrochemical applications along with other elements like boron , and so on. H termination of diamond has been found to possess an NEA of −1.96 eV theoretically and −1.3 eV experimentally. , However, hydrogen has been seen to desorb at elevated temperatures (≥700 °C) which renders it nonusable in the devices operating at high temperatures.…”
Section: Introductionmentioning
confidence: 82%
“…with 𝛿ℎ the RMS tip oscillation (experimentally measured at 0.65 nm). A reasonable estimate of 𝐸 𝑇𝑢𝑛𝑛𝑒𝑙 (3 eV) can be obtained by subtracting the applied bias (2 V) and an average of the negative electron affinity of diamond (~0.5 eV) [55] to the diamond band gap (5.5 eV). Only the pre-exponential factor 𝐴 𝑇 remains an adjustable parameter for graphical representation.…”
Section: Identification Of Electrical Transport Regimes 421 Experimen...mentioning
confidence: 99%