2005
DOI: 10.1007/s11180-005-0020-9
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Borophosphosilicate glass films in silicon microelectronics, part 2: Structure and applications

Abstract: The second part is presented of a review that summarizes the results of the 20-year research into CVD thin films of borophosphosilicate glass intended to serve as the premetal dielectric in multilevel metallization systems. The structure of the films and some aspects of their application are considered. VLSI TECHNOLOGY

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Cited by 3 publications
(2 citation statements)
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“…Thus, obtained BPSG films are less reactive with moisture and have a high density. These are characteristic features of type II films, which have a dense structure and homogenous distribution of boron and phosphorus oxides [29]. Fig.…”
Section: Materials Of Electronicsmentioning
confidence: 96%
See 1 more Smart Citation
“…Thus, obtained BPSG films are less reactive with moisture and have a high density. These are characteristic features of type II films, which have a dense structure and homogenous distribution of boron and phosphorus oxides [29]. Fig.…”
Section: Materials Of Electronicsmentioning
confidence: 96%
“…In situ thermal reflow was also employed in the present study and it as well allowed to obtain BPSG films that were immune to defect forma- ♦ -defect limit [29]; -defect limit [this study]; ▲ -optimum range [29]; × -optimum range [this study] …”
Section: Materials Of Electronicsmentioning
confidence: 99%