Bottom Electrodes for High Dielectric Oxide Compounds: Effects on Crystallization of Lead Containing Ferroelectrics

Abstract

Several conductive structures, which appeared to be usable as base electrodes for integrated devices based on high dielectric materials, have been annealed for 30 minutes in oxygen at 650 °C. Similar structures coated with lead-based ferroelectrics deposited by the sol-gel method have been annealed for 1 min in oxygen at higher temperatures. The materials have been characterized by Rutherford backscattering (RBS) and scanning electron microscopy (SEM) and the crystallographic structure of the ferroelectrics films has been determined by X-ray diffractometry (XRD).Only RuO2/Ru has been found to be suitable as an electrode, at temperatures not exceeding 650 °C. It has also been found that the electrode materials can strongly affect the crystallization behavior of the sol-gel ferroelectric films and the formation of single-phase perovskite layers.

Analysis of the stress and interfacial reactions in Pt/Ti/SiO2/Si for use with ferroelectric thin films

“…[41][42][43] This is in part due to the material transport of the remaining excess material away from the precursor solutions and in part due to the dynamics of the formation sequence, commonly through a pyrochlore-type phase. [41][42][43] This is in part due to the material transport of the remaining excess material away from the precursor solutions and in part due to the dynamics of the formation sequence, commonly through a pyrochlore-type phase.…”

Pyroelectric Thin Film Presence Detector Arrays with Micromachined Pixels

“…Table I shows the main properties of the optimum composition Pb(Zr 0.25 Ti 0.75 )O 3 . Since bottom electrode and seed layers are known to have a strong influence on the thin film crystallization process and consequently on its ferroelectric behaviour [12][13][14][15][16][17][18], different electrode and seed layer combinations have been tested extensively in the Siemens CS 730 S. In all cases, the used PZT composition was Pb(Zr 0.25 Ti 0.75 )O 3 . The detector relevant results of these investigation are listed in Table II. Concerning the demands on the pyroelectric capacitor for pyroelectric detector application, best results with large figures of merit F D of about 15 * 10 −6 Pa −1/2 can be achieved with Ti-Pt, Al 2 O 3 -Pt, and Al 2 O 3 -Pt-MnO x as seed layer and electrodes, respectively.…”

Current - voltage characteristic of asymmetric ferroelectric capacitors

“…Ferroelectric thin film capacitors, typified by platinum-Pb(Zr,Ti)O 3 -platinum (Pt/PZT/Pt), are the basic building blocks of ferroelectric devices [1][2][3]. It is found that both bottom and top interfaces of electrode-ferroelectrics are fairly important because many electrical properties of ferroelectric thin films, such as leakage current, hysteresis loop, fatigue, and breakdown, etc, are directly related to the interfaces [4][5][6]. In many cases, the bottom and top interfaces of an actual ferroelectric capacitor are asymmetric.…”