Bottom-Up Cu Filling of High-Aspect-Ratio through-Diamond vias for 3D Integration in Thermal Management

Abstract

Three-dimensional integrated packaging with through-silicon vias (TSV) can meet the requirements of high-speed computation, high-density storage, low power consumption, and compactness. However, higher power density increases heat dissipation problems, such as severe internal heat storage and prominent local hot spots. Among bulk materials, diamond has the highest thermal conductivity (≥2000 W/mK), thereby prompting its application in high-power semiconductor devices for heat dissipation. In this paper, we report an innovative bottom-up Cu electroplating technique with a high-aspect-ratio (10:1) through-diamond vias (TDV). The TDV structure was fabricated by laser processing. The electrolyte wettability of the diamond and metallization surface was improved by Ar/O plasma treatment. Finally, a Cu-filled high-aspect-ratio TDV was realized based on the bottom-up Cu electroplating process at a current density of 0.3 ASD. The average single-via resistance was ≤50 mΩ, which demonstrates the promising application of the fabricated TDV in the thermal management of advanced packaging systems.

Polycrystalline Diamond as a Potential Material for the Hard-on-Hard Bearing of Total Hip Prosthesis: Von Mises Stress Analysis

“…PCD is a material consisting of several diamond crystals arranged together [ 9 ]. Several characteristics such as its excellent hardness [ 10 ], extreme wear resistance [ 11 ], low coefficient of friction [ 12 ], superior toughness [ 13 ], and good biocompatibility [ 14 ] make it a potential material for bearing applications in a total hip prostheses. Another advantage of PCD is its good dimensional stability and resistance to deformation and mechanical damage [ 15 ].…”

Fabrication and Characterization of Thin Metal Films Deposited by Electroless Plating with Organic Additives for Electrical Circuits Applications

“…Today, the most studied and the cheapest silicon technology for IC fabrication has almost reached the limits of dimensional technology [ 1 ]; however, the miniaturization trend for microelectronics products is still reserved. Three-dimensional integration is seen as one of the most promising trends in silicon technology [ 2 , 3 ]. This technology will significantly reduce not only the size of semiconductor devices, but also enhance their energy efficiency and operational speed by reducing the length of interconnections [ 4 , 5 , 6 ].…”