Bottom-Up Masking of Si/Ge Surfaces and Nanowire Heterostructures <i>via</i> Surface-Initiated Polymerization and Selective Etching

Mohabir, Amar; Tütüncüoǧlu, Gözde; Weiss, Trent; Vogel, Eric M.; Filler, Michael A.

doi:10.1021/acsnano.9b04363

Cited by 10 publications

(10 citation statements)

References 54 publications

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“…Seed particles selectively collect and direct synthesis of nanoscale crystals, and the tunability of the chemical uptake within the particle allows axial encoding of heterogeneous composition along the length of the growing nanowires. Compositional changes can also be used for selective growth and removal of passivating polymers, creating patterns along the nanowire length . Colloidal assembly, , DNA scaffolds, and other electrostatic processes also allow patterned surface preparation.…”

Section: Introductionmentioning

confidence: 99%

“…Compositional changes can also be used for selective growth and removal of passivating polymers, creating patterns along the nanowire length. 71 Colloidal assembly, 72,73 DNA scaffolds, 74 and other electrostatic processes also allow patterned surface preparation. Tiles composed of geometrically defined DNA strands can assemble on a surface and guide the subsequent attachment of conductive or other structural elements.…”

Section: Introductionmentioning

confidence: 99%

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Area-Selective Deposition: Fundamentals, Applications, and Future Outlook

Parsons

Clark²

2020

Chem. Mater.

238

276

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This review provides an overview of area-selective thin film deposition (ASD) with a primary focus on vapor-phase thin film formation via chemical vapor deposition (CVD) and atomic layer deposition (ALD). Areaselective deposition has been successfully implemented in microelectronic processes, but most approaches to date rely on high-temperature reactions to achieve the desired substrate sensitivity. Continued size and performance scaling of microelectronics, as well as new materials, patterning methods, and device fabrication schemes are seeking solutions for new low-temperature (<400 °C) ASD methods for dielectrics, metals, and organic thin films. To provide an overview of the ASD field, this article critically reviews key challenges that must be overcome for ASD to be successful in microelectronics and other fields, including descriptions of current process application needs. We provide an overview of basic mechanisms in film nucleation during CVD and ALD and summarize current known ASD approaches for semiconductors, metals, dielectrics, and organic materials. For a few key materials, selectivity is quantitatively compared for different reaction precursors, giving important insight into needs for favorable reactant and reaction design. We summarize current limitations of ASD and future opportunities that could be achieved using advanced bottom-up atomic scale processes.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Area-Selective Deposition: Fundamentals, Applications, and Future Outlook

Parsons

Clark²

2020

Chem. Mater.

238

276

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“…Low-temperature ASD can be achieved by chemical vapor deposition (CVD), atomic layer deposition (ALD), and molecular layer deposition (MLD), with most recent attention focused on area-selective ALD. − While studies of ASD metals and dielectrics are most common, ASD of polymers is also expected to play an important role in bottom-up synthesis as nucleation inhibitors, low-k layers, and air-gap materials. − Previous studies of polymer CVD include several examples of substrate-preferential growth. − Using a thermally-excited reaction initiator, conjugated poly( p -phenylene vinylene) (PPV) and nonconjugated parylene N and parylene C were found to preferentially grow on hydroxylated silicon oxide (Si-OH) with minimal growth on iron and other transition metals. , Based on growth rates and surface topology, inhibition on the metal was ascribed to quenching of activated monomers by available surface charge, forming a thin passivation layer that impeded subsequent reaction. Similarly, area-selective CVD of poly(azomethine) was achieved on Si-OH vs hydrogen-terminated silicon (Si-H), but details of the related mechanism and the extent of selectivity were not well identified …”

Section: Introductionmentioning

confidence: 99%

Nanopatterned Area-Selective Vapor Deposition of PEDOT on SiO₂ vs Si-H: Improved Selectivity Using Chemical Vapor Deposition vs Molecular Layer Deposition

Kim

Parsons

2021

Chem. Mater.

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Area-selective deposition (ASD) of polymers is expected to be useful for self-aligned patterning of nucleation inhibitors, sacrificial layers, and air-gap materials during future bottom-up nanoscale materials fabrication. This work describes a simple, rapid, and effective method to achieve inherent ASD of poly(3,4-ethylenedioxythiophene) (PEDOT) on SiO2 vs hydrogen-terminated silicon (Si-H) substrates via molecular layer deposition (MLD) and chemical vapor deposition (CVD) using 3,4-ethylenedioxythiophene (EDOT) as a reactive monomer and SbCl5 as an oxidant for polymerization. Film thickness measured by spectroscopic ellipsometry indicates the MLD process can obtain ∼35 nm of deposition with a selectivity of 90%, i.e., t S=0.90 ≈ 35 nm, which is better than many other reports of inorganic or organic material ASD. Furthermore, we show that under CVD conditions, the selectivity is further improved, i.e., t S=0.90 ≈ 55.4 nm and that CVD can achieve ASD at an overall rate more than 100 times faster than MLD for the same ASD thickness, allowing 30 nm of ASD to be achieved in less than 10 s of process time. The selective growth of PEDOT on SiO2 vs Si-H is ascribed to the localized reduction of the SbCl5 on the Si-H surface, thereby inhibiting EDOT polymerization in that region. The high selectivity allows us to observe and analyze lateral “mushroom” overgrowth and compare ASD growth rates on blanket vs patterned wafers. Overall, results suggest that CVD may have distinct advantages over MLD or atomic layer deposition (ALD) for other ASD applications.

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Section: Synthesis Assembly and Properties Of Nanowires For Biointerf...mentioning

confidence: 99%

“…[ 30 ] The Filler group has reported a feasible approach to mask nanowire with polymers through selective coaxial lithography via etching of surfaces (SCALES). [ 31 ] Typically, the newly synthesized nanowires are first covered with conventional polymers by the surface‐ initiated polymerization through lithography and then the selective etchant is applied to remove the sacrificed cover at the desired position (Figure 1d). The SCALES method provides a versatile method of masking the nanowire with different synthetic polymers at different areas, paving the way for the building of organic and inorganic heterostructures on cellular and subcellular interfaces.…”

Section: Synthesis Assembly and Properties Of Nanowires For Biointerf...mentioning

confidence: 99%

Semiconductor Nanowire‐Based Cellular and Subcellular Interfaces

Shi

Sun

Liang

et al. 2021

Adv Funct Materials

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The highly intricate structures of biological systems make the precise probing of biological behaviors at the cellular‐level particularly difficult. As an advanced toolset capable of exploring diverse biointerfaces, high‐aspect‐ratio nanowires stand out with their unique mechanical, optical, and electrical properties. Specifically, semiconductor nanowires show much promise in their tunability and feasibility for synthesis and fabrication. Thus far, semiconductor nanowires have shown favorable results in deciphering biological communications and translating this cellular language through the nanowire‐based biointerfaces. In this perspective, the synthesis and fabrication methods for different kinds of nanowires and nanowire‐based structures are first surveyed. Next, several cellular‐level nanowire‐enabled applications in biophysical dynamics probing, physiological or biochemical sensing, and biological activity modulation are highlighted. Then, the progress of functionalized nanowires in drug delivery and bioenergy production is reviewed. Finally, the current limitations of nanowires and an outlook into the next generation of nanowire‐based devices at the biointerfaces are concluded.

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Bottom-Up Masking of Si/Ge Surfaces and Nanowire Heterostructures via Surface-Initiated Polymerization and Selective Etching

Cited by 10 publications

References 54 publications

Area-Selective Deposition: Fundamentals, Applications, and Future Outlook

Area-Selective Deposition: Fundamentals, Applications, and Future Outlook

Nanopatterned Area-Selective Vapor Deposition of PEDOT on SiO₂ vs Si-H: Improved Selectivity Using Chemical Vapor Deposition vs Molecular Layer Deposition

Semiconductor Nanowire‐Based Cellular and Subcellular Interfaces

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Bottom-Up Masking of Si/Ge Surfaces and Nanowire Heterostructures via Surface-Initiated Polymerization and Selective Etching

Cited by 10 publications

References 54 publications

Area-Selective Deposition: Fundamentals, Applications, and Future Outlook

Area-Selective Deposition: Fundamentals, Applications, and Future Outlook

Nanopatterned Area-Selective Vapor Deposition of PEDOT on SiO2 vs Si-H: Improved Selectivity Using Chemical Vapor Deposition vs Molecular Layer Deposition

Semiconductor Nanowire‐Based Cellular and Subcellular Interfaces

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Product

Resources

About

Nanopatterned Area-Selective Vapor Deposition of PEDOT on SiO₂ vs Si-H: Improved Selectivity Using Chemical Vapor Deposition vs Molecular Layer Deposition