Bottom-up modification boosts the performance of narrow-bandgap lead–tin perovskite single-junction and tandem solar cells

Abstract

GlyCl passivates the defects of narrow-bandgap Pb–Sn perovskites from bottom to up, boosting the solar cell efficiency from 14.28% to 22.07%.

Melatonin treatment as an anti-aging therapy for UV-related degradation of perovskite solar cells

“…4d, providing evidence of reduced current leakage and charge recombination. 55 The Mott–Schottky measurement (Fig. 4e) shows that the modified PSC exhibits a higher built-in potential ( V bi ) of 1.14 V than that of the control PSC (1.11 V), which is more favorable for the separation, transfer, and extraction of charges.…”

Reductive Sn2+ Compensator for Efficient and Stable Sn‐Pb Mixed Perovskite Solar Cells

“…The uniform distribution of surface contact potential is beneficial for effective carrier extraction and helps suppress non-radiative recombination, thus enabling the manufactured devices to have superior performance. [32] To gain insight into the effect of the SnC 2 O 4 modification on the photovoltaic performance, p-i-n planar PSCs with a configuration of ITO/PEDOT: PSS/perovskite/PCBM/BCP/Ag is fabricated and the schematic structure is shown in Figure 4a. Based on the J-V curve (Figure S12, Supporting Information) and the parameters summarized in Table S2 (Supporting Information), it is concluded that a 4% molar ratio of SnC 2 O 4 additive shows the best device performance, while an insufficient amount of SnC 2 O 4 additive cannot fully remove the residue on the grain boundary, thus resulting in limited improvement in device performance.…”

“…The uniform distribution of surface contact potential is beneficial for effective carrier extraction and helps suppress non‐radiative recombination, thus enabling the manufactured devices to have superior performance. [ 32 ]…”

Chelating Dual Interface for Efficient and Stable Crystal Growth and Iodine Defect Management in Sn–Pb Perovskite Solar Cells

“…The value of E F, edge was 1.08 eV for the control film and 0.87 eV for the OPC-modified film, while the corresponding E cutoff values were measured as 16.77 and 16.69 eV, respectively. By employing the equation E F = E cutoff – 21.22 eV, , the Fermi energy levels ( E F ) for the control and OPC-modified PVK films were calculated to be −4.45 and −4.53 eV, respectively. Furthermore, utilizing the formula E VB = E F – E F, edge , , the E VB values for the control and OPC-modified PVK films were computed as −5.53 and −5.40 eV, respectively.…”