“…The TE properties of materials can be improved by implementing the following approaches: (1) modification of the electronic band structure, Engineering of band convergence , and resonant level can efficiently improve S . This approach has been demonstrated in many TE materials, for instance, SnTe, − PbTe, , half-Heusler alloys, , and Mg 3 Sb 2 ; , (2) adjustment of the defect structures of materials during fabrication can reduce κ L , including point defects (substitution, interstitial defects, and vacancies), − dislocations, − interfaces, − and nanostructures, which have been reported. ,, Because of the large effect of defects on phonon scattering in certain frequency (ω) ranges, full-spectrum phonon scattering can be achieved by including multidimensional defects. − Subsequently, the suppression of κ L at both low and high temperatures has been achieved. − …”