Bound-Exciton, Free-Exciton, Band-Acceptor, Donor-Acceptor, and Auger Recombination in GaAs

Bogardus, E. Hal; Bebb, H. Barry

doi:10.1103/physrev.176.993

Cited by 239 publications

(95 citation statements)

References 20 publications

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“…The GaAs edge is observed in all the ensembles at E GaAs = 1.521 eV together with an acceptor level at E = 1.481 eV. 19 The reference InAs ensemble WL absorption edge is 1.423 eV. The introduction of a low-pressure Sb exposure step (samples B and C) before GaAs capping results in a 12-meV blueshift in the WL absorption resonance.…”

Section: Resultsmentioning

confidence: 97%

Effect of Sb incorporation on the electronic structure of InAs quantum dots

Taboada¹,

Llorens²,

Alonso-Álvarez³

et al. 2013

Phys. Rev. B

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On the basis of optical characterization experiments and an eight band kp model, we have studied the effect of Sb incorporation on the electronic structure of InAs quantum dots (QDs). We have found that Sb incorporation in InAs QDs shifts the hole wave function to the center of the QD from the edges of the QD where it is otherwise pinned down by the effects of shear stress. The observed changes in the ground-state energy cannot merely be explained by a composition change upon Sb exposure but can be accounted for when the change in lateral size is taken into consideration. The Sb distribution inside the QDs produces distinctive changes in the density of states, particularly, in the separation between excitation shells. We find a 50% increase in the thermal escape activation energy compared with reference InAs quantum dots as well as an increment of the fundamental transition decay time with Sb incorporation. Furthermore, we find that Sb incorporation into quantum dots is strongly nonlinear with coverage, saturating at low doses. This suggests the existence of a solubility limit of the Sb incorporation into the quantum dots during growth.

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Section: Resultsmentioning

confidence: 97%

Effect of Sb incorporation on the electronic structure of InAs quantum dots

Taboada¹,

Llorens²,

Alonso-Álvarez³

et al. 2013

Phys. Rev. B

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“…3(b) shows PL spectra of samples with altered Mgconcentrations (1.1%, 1.86%, and 2.8%) but grown at the same temperature, 750 C. These results imply that the FX emission gains PL intensity relative to the DX emission as the Mg-concentration increases. 28,29 In order to draw conclusions on the origin of the FX and DX in the ZnMgO band edge emission region, Figure 4 shows the PL and SPL spectra of the sample with a Mgconcentration of 0.84% (Z07). With the excitation resonant with either the DX peak in ZnO or the DX in ZnMgO, we can clearly identify the LO-phonon-replica related to the donor bound exciton in both ZnO and ZnMgO.…”

Section: Resultsmentioning

confidence: 99%

Properties of shallow donors in ZnMgO epilayers grown by metal organic chemical vapor deposition

Zhao¹,

Liu²,

Holtz³

2014

Journal of Applied Physics

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Influence of thermally diffused aluminum atoms from sapphire substrate on the properties of ZnO epilayers grown by metal-organic chemical vapor deposition J. Vac. Sci. Technol. A 29, 03A106 (2011) The grown samples were investigated by x-ray photoelectron spectroscopy and photoluminescence. The magnesium (Mg) concentration was varied between 0% and 3% in order to study the properties of shallow donors. The free and donor bound excitons could be observed simultaneously in our high quality Zn 1Àx Mg x O epilayers in the photoluminescence spectra. The results indicate that both built-in strain and Mg-concentration influence the donor exciton binding energy. It clearly shows that the donor exciton binding energy decreases with increasing Mg-concentration and with increasing built-in strain. Furthermore, the results indicate that the donor bound exciton transition energy increases with decreasing strength of the built-in strain if the Mg-concentration is kept the same in the Zn 1Àx Mg x O epilayers. V C 2014 AIP Publishing LLC.

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“…Alongside this redistribution, five distinct new lines appear in the spectra after irradiation with a dose of 10 16 cm À2 (w0 at 1.0325 eV, w1 at $1.0215 eV, w2 at $1.0102 eV, w3 at $0.9909 eV, and w2 LO at $0.98 eV). These lines become even more prominent once the dose increases further as shown in Fig.…”

Section: B Pl Emission From Irradiated Materialsmentioning

confidence: 99%

“…1 A specific advantage of CuInSe 2 -based PV devices is their exceptionally high tolerance to radiation. Measurements of the principal solar cell parameters after irradiation demonstrate almost total insensitivity of the conversion efficiency to high-energy electrons up to doses of 10 16 cm À2 . 2,3 Investigations of Cu(In,Ga)Se 2 -based solar cells irradiated with higher doses of MeV electrons confirmed a considerable stability of their performance.…”

Section: Introductionmentioning

confidence: 99%

“…[13][14][15] Optical spectroscopy studies on semiconductors with low defect concentrations showing excitonic features in their spectra can provide significantly more information. 8,16 However, there are relatively few reports revealing resolved excitonic features in the PL spectra from CuInSe 2 because of the challenges facing the growth of high-quality material. [17][18][19][20] This paper presents a study of the effects of 6 MeV electron radiation on high purity CuInSe 2 single crystals with a number of sharp excitonic features in the PL spectra.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A photoluminescence study of excitonic grade CuInSe2 single crystals irradiated with 6 MeV electrons

Yakushev

Mudryi

Borodavchenko

et al. 2015

Journal of Applied Physics

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This version is available at https://strathprints.strath.ac.uk/54688/ Strathprints is designed to allow users to access the research output of the University of Strathclyde. Unless otherwise explicitly stated on the manuscript, Copyright © and Moral Rights for the papers on this site are retained by the individual authors and/or other copyright owners. Please check the manuscript for details of any other licences that may have been applied. You may not engage in further distribution of the material for any profitmaking activities or any commercial gain. You may freely distribute both the url (https://strathprints.strath.ac.uk/) and the content of this paper for research or private study, educational, or not-for-profit purposes without prior permission or charge.Any correspondence concerning this service should be sent to the High-quality single crystals of CuInSe 2 with near-stoichiometric elemental compositions were irradiated with 6 MeV electrons, at doses from 10 15 to 3 Â 10 18 cm À2 , and studied using photoluminescence (PL) at temperatures from 4.2 to 300 K. Before irradiation, the photoluminescence spectra reveal a number of sharp and well resolved lines associated with free-and bound-excitons. The spectra also show broader bands relating to free-to-bound transitions and their phonon replicas in the lower energy region below 1.0 eV. The irradiation with 6 MeV electrons reduces the intensity of the free-and the majority of the bound-exciton peaks. Such a reduction can be seen for doses above 10 16 cm À2 . The irradiation induces new PL lines at 1.0215 eV and 0.9909 eV and also enhances the intensity of the lines at 1.0325 and 1.0102 eV present in the photoluminescence spectra before the irradiation. Two broad bands at 0.902 and 0.972 eV, respectively, are tentatively associated with two acceptor-type defects: namely, interstitial selenium (Se i ) and copper on indium site (Cu In ). After irradiation, these become more intense suggesting an increase in the concentration of these defects due to irradiation. V C 2015 AIP Publishing LLC.[http://dx

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Bound-Exciton, Free-Exciton, Band-Acceptor, Donor-Acceptor, and Auger Recombination in GaAs

Cited by 239 publications

References 20 publications

Effect of Sb incorporation on the electronic structure of InAs quantum dots

Effect of Sb incorporation on the electronic structure of InAs quantum dots

Properties of shallow donors in ZnMgO epilayers grown by metal organic chemical vapor deposition

A photoluminescence study of excitonic grade CuInSe2 single crystals irradiated with 6 MeV electrons

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