“…The set of transport equations for electrons, holes and ions have been numerically solved throughout the whole structure using, on the one hand, the typical boundary conditions at metal–semiconductor interfaces (see the Supporting Information) and, on the other hand, the boundary conditions at the CTL/perovskite interfaces, which impose the continuity of the potential, the current density and the electric displacement at the ETL/perovskite and perovskite/HTL heterojunctions. The continuity of electric displacement, D i , implies the following relations between the permittivity, ε i , and the electric field, F i : where the subindex, i = 1, 2, 3, indicates the layer: ETL → 1, perovskite → 2, and HTL → 3.…”