Boundary conditions of electrons at the interface

Cheng, Kun; Cheng, Shuyu

doi:10.1016/s0167-8442(01)00089-1

Cited by 12 publications

(8 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…They indicated that the boundary potential of the electron film was the important factor which was not considered before the investigation of theory. The calculation result of combining this concept with TFD model was in conformity with the experiment result [8]. In this paper, this concept was combined with TF model, and used it to treat the relationship between the electric field and boundary potential.…”

Section: Introductionsupporting

confidence: 69%

Gibbs free energy calculation of Al–Cu–Li alloy with the effect of electric field from electron level

Zhang

Chen

Wang

et al. 2008

Journal of Alloys and Compounds

View full text Add to dashboard Cite

Section: Introductionsupporting

confidence: 69%

Gibbs free energy calculation of Al–Cu–Li alloy with the effect of electric field from electron level

Zhang

Chen

Wang

et al. 2008

Journal of Alloys and Compounds

View full text Add to dashboard Cite

“…According to Virial's theorem, at an atom boundary the electron pressure P can be expressed as [12], where m is the mass of the electron, e is the electric charge of the electron, n is the electron density at the atom interface, and h is Plank's constant. Cheng et al [12] demonstrated that dislocations belonged to the meta-stable states of a crystal and yet they appeared to be relatively stable.…”

Section: Mechanism Underlying the Forma-tion Of Dislocation Expoundedmentioning

confidence: 99%

“…Cheng et al [12] demonstrated that dislocations belonged to the meta-stable states of a crystal and yet they appeared to be relatively stable. The prevailing driving force of dislocations arise from external stress, particularly from pressures exerted by Fermi electrons that support expansion at the expense of decreasing internal energy.…”

Section: Mechanism Underlying the Forma-tion Of Dislocation Expoundedmentioning

confidence: 99%

“…However, none of these models analyzed or explained the deformation mechanism of nano-crystals to the level of electron structure. Cheng et al [12,13] modified the Thomas-Fermi-Dirac electron theory, and advanced the mechanism underlying the formation of dislocations expounded on the motified Thomas-Fermi-Dirac electron theory. They raised the criterion condition on the limit size of dislocations, and provided calculated results of the limit size of a set of elements.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Electron theory based explanation and experimental study on deformation behavior of Cu/Ni multilayers

et al. 2004

View full text Add to dashboard Cite

Cu/Ni multilayers with various defined thickness of Cu and Ni layers were electrodeposited on low carbon steel substrates. Hardness measurements indicated that the increase in yield strength (one-third of hardness) with a decrease of layer thickness for Cu/Ni multilayers with single layer thickness at sub-micron length scale could be described by the Hall-Petch formula of the dislocation pile-up model. In the regime of few tens to a hundred nanometers of single layer thickness, the dislocation pileup-based Hall-Petch model broke down. This could be explained quantitatively according to the criterion condition on the limit size of dislocation derived from a modified Thomas-Fermi-Dirac electron theory.

show abstract

“…Cheng et al [4] pointed out that heterogeneous interface stress was caused by electronic transfer at the interface. The electron densities and the chemical potentials must be continuous in accordance with the principles of quantum.…”

Section: Introductionmentioning

confidence: 99%

Research on Internal Stress in Electroplated Cu Films and Ni Films on Ag Substrates

Zhu

Wang

Ren

2011

AMR

View full text Add to dashboard Cite

Electroplating was employed to prepare Cu films and Ni films on Ag substrates. The average internal stresses in Cu film and Ni film were measured in situ by cantilever beam test. The values of experimental internal stresses were compared with theoretical internal stresses. The results showed that the internal stresses of Cu film and Ni film decreased with the increase of the film thickness. The reduced gradient was faster. The values of experimental and theoretical internal stresses had the same variation trend with film thickness and the same characteristics (tensile stress). Theoretical calculation model of internal stress was of accuracy. The internal stress for the same substrate was in relation to the film material.

show abstract

Boundary conditions of electrons at the interface

Cited by 12 publications

References 4 publications

Gibbs free energy calculation of Al–Cu–Li alloy with the effect of electric field from electron level

Gibbs free energy calculation of Al–Cu–Li alloy with the effect of electric field from electron level

Electron theory based explanation and experimental study on deformation behavior of Cu/Ni multilayers

Research on Internal Stress in Electroplated Cu Films and Ni Films on Ag Substrates

Contact Info

Product

Resources

About