Bowing of GaN bulk crystals with mismatched epitaxial structures of (AlInGa)N

The inherent problem in III-nitride technology is the cracking of AlGaN layers that results from lattice mismatch between AlGaN and GaN. In case of thin substrates (30–90μm), such as, bulk GaN grown by the high-pressure/high-temperature method, the bowing of AlGaN∕GaN strained structures becomes an additional problem. To eliminate cracking and bowing, AlGaN layers were grown on GaN substrates with an AlN mask patterned to form 3–15μm wide windows. In the 3μm window, the AlGaN layer was not cracked, although its thickness and Al composition exceeded critical values for growth on nonpatterned substrates. Dislocation density in the windows was of 5×106∕cm2.

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Elimination of AlGaN epilayer cracking by spatially patterned AlN mask

Sarzynski

Kryśko

Targowski

et al. 2006

Applied Physics Letters

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Strain-compensated AlGaN∕GaN∕InGaN cladding layers in homoepitaxial nitride devices

Czernecki

Krukowski

Targowski

et al. 2007

Applied Physics Letters

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One of the most important problems in III-nitride violet laser diode technology is the lattice mismatch between the AlGaN cladding layers and the rest of the epitaxial structure. For efficiently working devices, it is necessary to have both a high Al content and thick claddings. This leads, however, to severe sample bowing and even cracking of the upper layer. In this work, we propose a cladding structure of strain-compensated AlGaN∕GaN∕InGaN superlattice grown by metal-organic vapor phase epitaxy on bulk GaN substrates. Various thicknesses and compositions of the layers were employed. We measured the radius of bowing, lattice mismatches, aluminum and indium contents, and densities of threading dislocations. The proposed cladding structures suppress bowing and cracking, which are the two parasitic effects commonly experienced in laser diodes with bulk AlGaN claddings. The suppression of cracking and bowing is shown to occur due to modified strain energy distribution of the superlattices structure.

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Bowing of GaN bulk crystals with mismatched epitaxial structures of (AlInGa)N

Cited by 2 publications

References 5 publications

Elimination of AlGaN epilayer cracking by spatially patterned AlN mask

Elimination of AlGaN epilayer cracking by spatially patterned AlN mask

Strain-compensated AlGaN∕GaN∕InGaN cladding layers in homoepitaxial nitride devices

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