A recognized drawback of edge-emitting diode lasers is their high divergence and elliptical beam shape since the first diode laser was demonstrated. In this paper, we demonstrated the ultranarrow circular beam emission from the broad area diode laser based on a modified Bragg-like waveguide. The low vertical divergence of 9.8°with 95% power content and 4.91°with the full-width at half-maximum was realized in the devices with 150 μm stripe width. The maximum output power was 4.2 W under quasi-continuous-wave operation and presently limited by thermal rollover. The detailed design principle was presented and it was found that reducing the refractive index and thickness of the defect layer was able to improve the vertical divergence and achieve the stable circular beam emission by controlling the lateral current distribution using the deep stripe. The packaged device with 90 μm stripe width demonstrated a maximum continuous wave power of 4.6 W at 10°C. A direct fiber coupling efficiency of 90.6% had been achieved with a common fiber of 105 μm core diameter.Index Terms-Semiconductor lasers, photonic bandgap, lowbeam divergence, high-power diode lasers.
1077-260X