1983
DOI: 10.1016/0022-3115(83)90151-4
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‘Breakaway’ growth in annealed Zircaloy-2 at 353 K and 553 K

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1984
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Cited by 49 publications
(3 citation statements)
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“…Dislocation c -type loops attain a stationary value of the loop number density 10 21 m −3 [18,19]. Large faulty vacancy dislocation c loops and a loops are responsible for the accelerated process of irradiation growth as a process with an emergence of internal strains in the crystal when growth strains in all crystallographic directions are nonzero but the total volume of the system remains constant [20][21][22]. Experimental studies show that the irradiation growth depends on neutron fluence [18,23], temperature [12,21,23], alloy composition [24] and thermomechanical history [23,25,26] but a detailed mechanistic understanding is presently absent.…”
Section: Introductionmentioning
confidence: 99%
“…Dislocation c -type loops attain a stationary value of the loop number density 10 21 m −3 [18,19]. Large faulty vacancy dislocation c loops and a loops are responsible for the accelerated process of irradiation growth as a process with an emergence of internal strains in the crystal when growth strains in all crystallographic directions are nonzero but the total volume of the system remains constant [20][21][22]. Experimental studies show that the irradiation growth depends on neutron fluence [18,23], temperature [12,21,23], alloy composition [24] and thermomechanical history [23,25,26] but a detailed mechanistic understanding is presently absent.…”
Section: Introductionmentioning
confidence: 99%
“…Growth at lower temperatures is a different matter. Early results for cold-worked material irradiated at 330-350 K demonstrates the same shrinkage along directions containing a high proportion c-axes as at high temperatures [10] showing that true growth is occurring (approximating constant volume), and subsequent data at 330K indicated that, as at higher temperatures the steady state growth rate is linearly proportional to the displacement damage rate [2]. In annealed material the growth rate quickly saturates (unless there are significant built-in intergranular constraints [11]) and no further change in dimensions occurs (to fluences up many 10's of displacements per atom (dpa)).…”
Section: Introductionmentioning
confidence: 85%
“…In a fully recrystallized material, TEM shows, on the one hand, the increase in the total dislocation density in the initial IIG phase (Williams et al, 1984) and, on the other hand, the saturation of the number density of hai loops during the steady-state growth phase (Carpenter et al, 1988;Griffiths, 1988). In a later phase of service, the IIG rate increases and becomes the accelerated or 'breakaway' growth phase (Rogerson & Murgatroyd, 1983;Griffiths, 1988;Rogerson, 1988;Griffiths et al, 1989). With increased dose large faulted vacancy-type dislocation loops, known as hci loops, are also observed to form on the basal plane with a Burgers vector of 1 6 h2023i (Holt & Gilbert, 1986;Griffiths & Gilbert, 1987).…”
Section: Introductionmentioning
confidence: 99%