“…In a fully recrystallized material, TEM shows, on the one hand, the increase in the total dislocation density in the initial IIG phase (Williams et al, 1984) and, on the other hand, the saturation of the number density of hai loops during the steady-state growth phase (Carpenter et al, 1988;Griffiths, 1988). In a later phase of service, the IIG rate increases and becomes the accelerated or 'breakaway' growth phase (Rogerson & Murgatroyd, 1983;Griffiths, 1988;Rogerson, 1988;Griffiths et al, 1989). With increased dose large faulted vacancy-type dislocation loops, known as hci loops, are also observed to form on the basal plane with a Burgers vector of 1 6 h2023i (Holt & Gilbert, 1986;Griffiths & Gilbert, 1987).…”