Breakdown Enhancement and Current Collapse Suppression in AlGaN/GaN HEMT by NiOX/SiNX and Al2O3/SiNX as Gate Dielectric Layer and Passivation Layer

Gao, Sheng; Zhou, Quanbin; Liu, Xiaoyi; Wang, Hong

doi:10.1109/led.2019.2945175

Cited by 38 publications

(17 citation statements)

References 29 publications

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“…However, plasma treatment like N2O treatment is usually performed in a PECVD chamber. Some researchers pointed out that the active plasma sources in PECVD could induce damage to the surface of (Al)GaN surface [10], [11]. The semiconductor surface damage increases the surface trap or dangling bond defects, resulting in a weak passivation protection effect and increased current collapse [12], [13].…”

Section: Introductionmentioning

confidence: 99%

Effective Suppression of Current Collapse in AlGaN/GaN HEMT With N₂O Plasma Treatment Followed by High Temperature Annealing in N₂ Ambience

Chen

Qin

Xiao

et al. 2022

IEEE J. Electron Devices Soc.

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We propose a high temperature annealing process in N2 ambience after N2O plasma treatment for AlGaN/GaN HEMT. The annealing process effectively improves the plasma treated surface condition and decreases the current collapse from 41.7% to 10.6%. The N2O plasma treatment is performed in a PECVD chamber and the followed high temperature annealing process is carried out at 800℃ for 20min in rapid temperature annealing (RTA) system. Compared to the devices with only N2O plasma treatment, the devices with an extra high temperature annealing process perform lower surface state density (2.51E+12 cm −2 eV -1 , △E from 0.353 eV to 0.413 eV; 5.38E+11 cm −2 , △E > 0.519 eV) and better dynamic characteristics.

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Section: Introductionmentioning

confidence: 99%

Effective Suppression of Current Collapse in AlGaN/GaN HEMT With N₂O Plasma Treatment Followed by High Temperature Annealing in N₂ Ambience

Chen

Qin

Xiao

et al. 2022

IEEE J. Electron Devices Soc.

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“…[ 2 ] The common way to reduce the current collapse of devices is to grow a SiN x as a passivation layer. [ 3 ] Nevertheless, a detrimental rise in leakage current may be caused by fabrication damages. [ 4,5 ] Remote inductively coupled plasma chemical vapor deposition (ICP‐CVD) [ 6 ] and low‐pressure chemical vapor deposition (LPCVD) [ 7 ] techniques have been proposed for damage‐free passivation.…”

Section: Introductionmentioning

confidence: 99%

Comparative Study on Characteristics of AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors

Zhen

Wang

Qin

et al. 2022

Physica Status Solidi (a)

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GaN-based high-electron-mobility transistors (HEMTs) have emerged as a promising candidate for next-generation high-efficiency power electronics including high-frequency power amplifiers and high-voltage power switches. [1] However, reliability problems such as gate leakage current and current collapse are the main issues that limit the performance of AlGaN/GaN HEMTs. [2] The common way to reduce the current collapse of devices is to grow a SiN x as a passivation layer. [3] Nevertheless, a detrimental rise in leakage current may be caused by fabrication damages. [4,5] Remote inductively coupled plasma chemical vapor deposition (ICP-CVD) [6] and low-pressure chemical vapor deposition (LPCVD) [7] techniques have been proposed for damage-free passivation. However, these techniques require longer time, higher cost, and higher temperature. [1] It is still a challenge to obtain lower gate leakage and lower current collapse simultaneously.

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“…Appropriate passivation could alleviate the current collapse by reducing the surface state density and it has become one of the most crucial processes in the fabrication of HEMTs. [6,7] Although silicon nitride (SiN x ) deposited by plasma-enhanced chemical vapor deposition (PECVD) has been commonly used as a surface passivation layer for GaN, [8,9] this process introduces a significant increase in gate leakage current. [10] This causes inacceptable power loss and it is detrimental for transistors operating at a high operating voltage and power.…”

Section: Introductionmentioning

confidence: 99%

Reduced Reverse Gate Leakage Current for p‐GaN Gate High‐Electron‐Mobility Transistors by a Surface‐Etching Method

Sun

Ding

Wei

et al. 2021

Physica Status Solidi (a)

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Herein, the mechanism of increased gate leakage current observed in SiN x -passivated high-resistivity cap layer high-electron-mobility transistors (HRCL-HEMTs) is investigated. The leakage is found to be correlated with the roughened morphology and deviated surface stoichiometry caused by H-plasma treatment. An additional step of surface etching before passivation restores GaN surface and gate leakage is reduced by about two orders of magnitude, whereas the other electrical characteristics of p-GaN HEMTs are preserved.

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Breakdown Enhancement and Current Collapse Suppression in AlGaN/GaN HEMT by NiO_X/SiN_X and Al₂O₃/SiN_X as Gate Dielectric Layer and Passivation Layer

Cited by 38 publications

References 29 publications

Effective Suppression of Current Collapse in AlGaN/GaN HEMT With N₂O Plasma Treatment Followed by High Temperature Annealing in N₂ Ambience

Effective Suppression of Current Collapse in AlGaN/GaN HEMT With N₂O Plasma Treatment Followed by High Temperature Annealing in N₂ Ambience

Comparative Study on Characteristics of AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors

Reduced Reverse Gate Leakage Current for p‐GaN Gate High‐Electron‐Mobility Transistors by a Surface‐Etching Method

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Breakdown Enhancement and Current Collapse Suppression in AlGaN/GaN HEMT by NiOX/SiNX and Al2O3/SiNX as Gate Dielectric Layer and Passivation Layer

Cited by 38 publications

References 29 publications

Effective Suppression of Current Collapse in AlGaN/GaN HEMT With N2O Plasma Treatment Followed by High Temperature Annealing in N2 Ambience

Effective Suppression of Current Collapse in AlGaN/GaN HEMT With N2O Plasma Treatment Followed by High Temperature Annealing in N2 Ambience

Comparative Study on Characteristics of AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors

Reduced Reverse Gate Leakage Current for p‐GaN Gate High‐Electron‐Mobility Transistors by a Surface‐Etching Method

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Breakdown Enhancement and Current Collapse Suppression in AlGaN/GaN HEMT by NiO_X/SiN_X and Al₂O₃/SiN_X as Gate Dielectric Layer and Passivation Layer

Effective Suppression of Current Collapse in AlGaN/GaN HEMT With N₂O Plasma Treatment Followed by High Temperature Annealing in N₂ Ambience

Effective Suppression of Current Collapse in AlGaN/GaN HEMT With N₂O Plasma Treatment Followed by High Temperature Annealing in N₂ Ambience