Breakdown of Far-Field Raman Selection Rules by Light–Plasmon Coupling Demonstrated by Tip-Enhanced Raman Scattering

Poliani, Emanuele; Wagner, Markus R.; Vierck, Asmus; Herziger, Felix; Nenstiel, Christian; Gannott, Florentina; Schweiger, Manuel; Fritze, S.; Dadgar, A.; Zaumseil, Jana; Krost, A.; Hoffmann, A.; Maultzsch, Janina

doi:10.1021/acs.jpclett.7b02505

Cited by 18 publications

(40 citation statements)

References 72 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In such cases, some Raman inactive modes can become Raman active [46]. Moreover, light-plasmon coupling in a nanocavity between the tip and the metal substrate can lead to the alteration of classical Raman selection due to photon tunneling through perturbation of the evanescent field [47].…”

Section: Surface Selection Rules Of Ters In 2d Semiconductorsmentioning

confidence: 99%

Tip-Enhanced Raman Spectroscopy of 2D Semiconductors

Rahaman¹,

Zahn²

2022

Recent Developments in Atomic Force Microscopy and Raman Spectroscopy for Materials Characterization

View full text Add to dashboard Cite

Two-dimensional (2D) semiconductors are one of the most extensively studied modern materials showing potentials in large spectrum of applications from electronics/optoelectronics to photocatalysis and CO2 reduction. These materials possess astonishing optical, electronic, and mechanical properties, which are different from their bulk counterparts. Due to strong dielectric screening, local heterogeneities such as edges, grain boundaries, defects, strain, doping, chemical bonding, and molecular orientation dictate their physical properties to a great extent. Therefore, there is a growing demand of probing such heterogeneities and their effects on the physical properties of 2D semiconductors on site in a label-free and non-destructive way. Tip-enhanced Raman spectroscopy (TERS), which combines the merits of both scanning probe microscopy and Raman spectroscopy, has experienced tremendous progress since its introduction in the early 2000s and is capable of local spectroscopic investigation with (sub-) nanometer spatial resolution. Introducing this technique to 2D semiconductors not only enables us to understand the effects of local heterogeneities, it can also provide new insights opening the door for novel quantum mechanical applications. This book chapter sheds light on the recent progress of local spectroscopic investigation and chemical imaging of 2D semiconductors using TERS. It also provides a basic discussion of Raman selection rules of 2D semiconductors important to understand TERS results. Finally, a brief outlook regarding the potential of TERS in the field of 2D semiconductors is provided.

show abstract

Section: Surface Selection Rules Of Ters In 2d Semiconductorsmentioning

confidence: 99%

Tip-Enhanced Raman Spectroscopy of 2D Semiconductors

Rahaman¹,

Zahn²

2022

Recent Developments in Atomic Force Microscopy and Raman Spectroscopy for Materials Characterization

View full text Add to dashboard Cite

show abstract

“…Additionally, the light-plasmon coupling in TERS can also modify the classical Raman selection rules, caused by photon tunneling through perturbation of the evanescent field. [201] 6. Applications: TERS imaging of 2D materials…”

Section: = (4)mentioning

confidence: 99%

“…[36] Recently, Poliani et al reported that the plasmon enhanced Raman signal is largely independent of the incoming light polarization in several materials, due to a modification of the Raman selection rules in TERS. [201] Moreover, the study of symmetry--imposed selection rules also facilitates the understanding of linear and nonlinear optical processes in molecules and solids. [244] However, the influence of the gap-mode on the symmetry--derived selection rules for TERS still remains to be elucidated.…”

Section: Selection Rules For Tersmentioning

confidence: 99%

Tip-enhanced Raman spectroscopy: principles, practice, and applications to nanospectroscopic imaging of 2D materials

2018

View full text Add to dashboard Cite

Two-dimensional (2D) materials have been one of the most extensively studied classes of modern materials, due to their astonishing chemical, optical, electronic, and mechanical properties, which are different from their bulk counterparts. The edges, grain boundaries, local strain, chemical bonding, molecular orientation, and the presence of nanodefects in these 2D monolayers (MLs) will strongly affect their properties. Currently, it is still challenging to investigate such atomically thin 2D monolayers with nanoscale spatial resolution, especially in a label-free and non-destructive way. Tip-enhanced Raman spectroscopy (TERS), which combines the merits of both scanning probe microscopy (SPM) and Raman spectroscopy, has become a powerful analytical technique for studying 2D monolayers, because it allows very high-resolution and high-sensitivity local spectroscopic investigation and imaging, and also provides rich chemical information. This review provides a summary of methods to study 2D monolayers and an overview of TERS, followed by an introduction to the current state-of-the-art and theoretical understanding the spatial resolution in TERS experiments. Surface selection rules are also discussed. We then focus on the capabilities and potential of TERS for nanoscale chemical imaging of 2D materials, such as graphene, transition metal dichalcogenides (TMDCs), and 2D polymers. We predict that TERS will become widely accepted and used as a versatile imaging tool for chemical investigation of 2D materials at the nanoscale.

show abstract

“…Thus, TERS probes only a few nanometers into the surface and sapphire modes are no longer detectable. [23] The spectra #2 and #3 show a tip-enhanced Raman peak located at 460 cm −1 . This peak is assigned to the A 1 (TO) phonon mode of the InGaN alloy.…”

mentioning

confidence: 98%

“…The tip is produced by electrochemical etching of a 50 µm thick gold wire. The details of the TERS setup and scattering mechanisms are described in reference [23]. The compositional homogeneity of the different In-GaN films on the micrometer scale was studied by micro-Raman mapping over an area of 10×10 µm 2 .…”

mentioning

confidence: 99%

Nanoscale InN clusters and compositional inhomogeneities in InGaN epitaxial layers quantified by tip-enhanced Raman scattering

Seidlitz

Poliani

Ries

et al. 2021

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

We investigate the compositional homogeneity of InGaN thin films with a high In content grown by migration-enhanced plasma-assisted metal-organic chemical vapor deposition. Micro-Raman spectroscopy and tip-enhanced Raman spectroscopy (TERS) are used to analyze the local InGaN composition on the micro- and nanoscale. Based on conventional micro-Raman mapping, the InGaN composition for all samples appears uniform but shows indications for intrinsic phase separations. TERS, a nanoscopic technique with a high spatial resolution far below the diffraction limit, verifies the formation of nanoscale compositional inhomogeneities. The dimensions of these compositional fluctuations observed in TERS are confirmed by scattering-type scanning near-field infrared nanoscopy (s-SNIN). In contrast to s-SNIN, we show that TERS furthermore enables the quantification of the In content in the different compositional regions and even allows the identification of InN nanoclusters near the surface of the epitaxial films.

show abstract

Breakdown of Far-Field Raman Selection Rules by Light–Plasmon Coupling Demonstrated by Tip-Enhanced Raman Scattering

Cited by 18 publications

References 72 publications

Tip-Enhanced Raman Spectroscopy of 2D Semiconductors

Tip-Enhanced Raman Spectroscopy of 2D Semiconductors

Tip-enhanced Raman spectroscopy: principles, practice, and applications to nanospectroscopic imaging of 2D materials

Nanoscale InN clusters and compositional inhomogeneities in InGaN epitaxial layers quantified by tip-enhanced Raman scattering

Contact Info

Product

Resources

About