2001
DOI: 10.1109/16.954452
|View full text |Cite
|
Sign up to set email alerts
|

Breakdown quenching in high electron mobility transistor by using body contact

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

0
3
0
1

Year Published

2002
2002
2019
2019

Publication Types

Select...
6
2

Relationship

0
8

Authors

Journals

citations
Cited by 13 publications
(4 citation statements)
references
References 15 publications
0
3
0
1
Order By: Relevance
“…Although InP-based high electron mobility transistors (HEMTs) are the most promising candidates for active devices in high-speed and high-frequency integrated circuits, their utility for microwave power applications is limited when the kink effect (an anomalous increase in the drain current I D at sufficiently high drain-source voltages V DS ) emerges, so that its analysis is considered to be essential for the development of these transistors [1][2][3][4][5]. In particular, this phenomenon leads to a large degradation in the dynamic performance of the HEMT [3,6].…”
Section: Introductionmentioning
confidence: 99%
“…Although InP-based high electron mobility transistors (HEMTs) are the most promising candidates for active devices in high-speed and high-frequency integrated circuits, their utility for microwave power applications is limited when the kink effect (an anomalous increase in the drain current I D at sufficiently high drain-source voltages V DS ) emerges, so that its analysis is considered to be essential for the development of these transistors [1][2][3][4][5]. In particular, this phenomenon leads to a large degradation in the dynamic performance of the HEMT [3,6].…”
Section: Introductionmentioning
confidence: 99%
“…In logic circuit applications, high electron-mobility transistors (HEMTs) [1] and field-effect transistors (FETs) [2] provide excellent figures of merit in LSI-level complexity. Recently, extensive research has been focused upon HEMTs with reduced current-saturation voltages, which are suitable for low supply-voltage applications by implementing directcoupled FET logic (DCFL) technology [3][4][5][6].…”
Section: Introductionmentioning
confidence: 99%
“…Some works suggest that impact ionization and the subsequent hole dynamics (jointly with trapping processes) can be responsible for the kink effect. [2][3][4][5][6][7][8] Kink phenomena, not still completely understood, specially in short-channel HEMTs, 2 lead to a significant raise of the noise in the devices, which spoils their performance. The aim of this work is to analyze the noise associated with the kink effect and explain its physical origin in short-channel recessed In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As HEMTs.…”
Section: Introductionmentioning
confidence: 99%