Breakdown Ruggedness of Quasi-Vertical GaN-Based p-i-n Diodes on Si Substrates

Zou, Xinbo; Zhang, Xu; Lü, Xing; Tang, Ching Wan; Lau, Kei May

doi:10.1109/led.2016.2594821

Cited by 34 publications

(13 citation statements)

References 21 publications

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“…It can be seen that although the leakage current of GaN-on-Si vertical devices is 10 2 −10 3 -fold higher than that in GaN-on-GaN device, it is much lower than that in lateral AlGaN/GaN diodes, for a similar reverse electric field level. In addition, it was recently reported that vertical GaN-on-Si pn diodes could survive repetitive avalanche tests with surge current and voltages, indicating similar breakdown ruggedness to the avalanche breakdown [72]. These results support the great potential of the cost-effective vertical GaN-on-Si devices for high-voltage applications.…”

Section: Vertical Gan-on-si Diodessupporting

confidence: 68%

Materials and processing issues in vertical GaN power electronics

Zhang

Sun

et al. 2018

Materials Science in Semiconductor Processing

130

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Silicon-based power devices are reaching their fundamental performance limit. The use of wide-bandgap semiconductors with superior material properties over silicon offers the potential for power electronic systems with much higher power densities and higher conversion efficiency. GaN, with a high critical electric field and carrier mobility, is considered one of the most promising candidates for future high-power, high frequency and high temperature applications. High voltage transistors and diodes based on both lateral and vertical structures are of great interest for future power electronics. Particularly, vertical GaN power devices have recently attracted increasing attention due to their many unique properties. This paper reviews recent progress and key remaining challenges towards the development of high-performance vertical GaN transistors and diodes with emphasis on the materials and processing issues related to each device architecture.

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Section: Vertical Gan-on-si Diodessupporting

confidence: 68%

Materials and processing issues in vertical GaN power electronics

Zhang

Sun

et al. 2018

Materials Science in Semiconductor Processing

130

View full text Add to dashboard Cite

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“…However, the high cost and small available size of bulk GaN substrates limit the wide-spread commercial adoption of vertical power devices on bulk GaN. The GaN-on-Si platform offers a costeffective alternative for vertical GaN power devices, due to its large-scale availability, low cost, and a mature fabrication technology [14][15][16][17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

645 V quasi-vertical GaN power transistors on silicon substrates

Liu

Khadar

Matioli

2018

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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In this paper, we present GaN-on-Si vertical transistors consisting of a 6.7 μm thick n-p-n heterostructure grown on 6-inch silicon substrates by MOCVD. The fabricated vertical trench gate MOSFETs exhibited E-mode operation with a threshold voltage of 3.3 V and an on/off ratio of over 10 8. A specific on-resistance of 6.8 mΩ•cm 2 and a high off-state breakdown voltage of 645 V were achieved. These results show the great potential of the GaN-on-Si platform for the next generation of cost-effective power electronics.

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“…In recent years, several groups have reported GaN‐based vertical p‐i‐n diodes successfully fabricated on low defect density bulk GaN substrate with promising performance . Some of them exhibit avalanche capability, which is an essential reliability requirement for safe operations of high‐power devices as avalanche breakdown may happen in every switching converter or inverter during transient operating modes . However, the high cost of bulk GaN substrate may ultimately limit the future application of the GaN‐on‐GaN approach.…”

Section: Introductionmentioning

confidence: 99%

Avalanche Ruggedness of GaN p-i-n Diodes Grown on Sapphire Substrate

Liu

Zhou

et al. 2018

Phys. Status Solidi A

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Avalanche capability plays critical roles in safe operation of GaN‐based high power devices and systems. In this study, GaN‐based quasi‐vertical p‐i‐n diodes on sapphire substrate with avalanche capability are fabricated, and for the first time, their avalanche ruggedness is investigated. Repeated avalanche breakdown tests suggest the representative features of avalanche‐capability degradation, reduction in breakdown voltage, and rise in reverse leakage current. Further numerical simulations reveal the localization of avalanche breakdown, while subsequent pulsed current–voltage measurements identify that the thermal heating effect generated during localized avalanche multiplication is responsible for the device degradation in avalanche ruggedness.

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Breakdown Ruggedness of Quasi-Vertical GaN-Based p-i-n Diodes on Si Substrates

Cited by 34 publications

References 21 publications

Materials and processing issues in vertical GaN power electronics

Materials and processing issues in vertical GaN power electronics

645 V quasi-vertical GaN power transistors on silicon substrates

Avalanche Ruggedness of GaN p-i-n Diodes Grown on Sapphire Substrate

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