Breakdown-Voltage-Enhancement Technique for RF-Based AlGaN/GaN HEMTs With a Source-Connected Air-Bridge Field Plate

Xie, Gang; Xu, E.; Lee, Junmin; Hashemi, Niloufar; Zhang, Bo; Fu, Fred; Ng, Wai Tung

doi:10.1109/led.2012.2188492

Cited by 78 publications

(27 citation statements)

References 7 publications

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“…Field-plate structures have been applied to AlGaN/GaN HEMTs [23][24][25][26][27] to mitigate the concentration of electric field at the gate edge of the drain side, which is effective in reducing the current collapse. However, several reliability issues still remain in GaN HEMTs.…”

Section: Introductionmentioning

confidence: 99%

Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs

Ohi

Asubar

Nishiguchi

et al. 2013

IEEE Trans. Electron Devices

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University. His research interests included surface passivation and device processing technologies for III-V compound semiconductors. Currently, his major activity expanded into characterization and control of surfaces and interfaces of GaN and related materials and their application to GaN-based electron devices. He has authored or co-authored over 160 papers in scientific and technical journals.

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Section: Introductionmentioning

confidence: 99%

Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs

Ohi

Asubar

Nishiguchi

et al. 2013

IEEE Trans. Electron Devices

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“…So, C gs , C gd , and C ds should be used to represent the intrinsic capacitances of intrinsic FET part. For the case shown in Figure 1B, the source‐connected FP structure slightly reduces C gd but at the cost of an increase in C gs . 14 To verify this point, the extracted total capacitances C gst , C gd , and C dst for 2 × 100 μm GaN device with NFP/FP structures under cold pinch‐off condition are given in Figure 3. For the case of NFP GaN device, C gst = 105.9 fF and C gd = 96.4 fF.…”

Section: Capacitance Partitioning Characteristics Of Cold Pinch‐off Gmentioning

confidence: 87%

“…Also, it is worth noting that the above assumptions are probably only applicable in the non‐field‐plate (NFP) GaN devices, as shown in Figure 1A. To enhance the breakdown voltage and suppress the current collapse, a field‐plate (FP) structure is used, 14,15 and a typical example is shown in Figure 1B. Moreover, to further improve the breakdown voltage and reduce the on‐resistance, the gate‐drain spacing L GD is increased, and the gate‐source spacing L GS is reduced, which results in an asymmetric structure of GaN device 16,17 .…”

Section: Introductionmentioning

confidence: 99%

Improved small‐signal hybrid parameter‐extraction technique for AlGaN / GaN high electron mobility transistors

Helaoui

Cai

et al. 2021

Int J RF Mic Comp-Aid Eng

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An improved hybrid parameter‐extraction technique is proposed for the small‐signal modeling application in AlGaN/GaN high electron mobility transistors (HEMTs). The capacitance partitioning characteristics of cold pinch‐off GaN device with non‐field‐plate and field‐plate structures are reinvestigated and the scanning range of parasitic capacitances Cpg and Cpd is determined. A systematic optimization approach is proposed to obtain the initial values of Cpg and Cpd. By using the global optimization algorithm, particle swarm optimization, the reliable parasitic parameters can be acquired based on the proposed error function. The validity of the developed hybrid parameter‐extraction method is verified by 2 × 100 μm AlGaN/GaN HEMT with source‐connected FP structure from 0.1 to 40 GHz among the 442 biasing points.

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“…While manipulating the electric field, implementing FPs also introduces parasitic capacitance (e.g., C GD and C DS ), which may compromise the high frequency and switching performance of the device. [ 245 ] Therefore, a few unique FP structures were proposed, such as floating grating FPs [ 246 ] and air‐bridge FP, [ 247 ] to reduce the parasitic capacitance. A slant‐shaped FP was also applied to smoothen the electric field profile and increase the device V BD .…”

Section: Electric Field Manipulationmentioning

confidence: 99%

Recent Advances in GaN‐Based Power HEMT Devices

Cheng

Wang

et al. 2021

Adv Elect Materials

135

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The ever‐increasing power density and operation frequency in electrical power conversion systems require the development of power devices that can outperform conventional Si‐based devices. Gallium nitride (GaN) has been regarded as the candidate for next‐generation power devices to improve the conversion efficiency in high‐power electric systems. GaN‐based high electron mobility transistors (HEMTs) with normally‐off operation is an important device structure for different application scenarios. In this review, an overview of a series of effective approaches to improve the performance of GaN‐based power HEMT devices is given. Modified epistructures are presented to suppress defects and current leakage, and low‐damage recess‐free processes are discussed in fabricating normally‐off HEMTs. Possible effects of dielectrics on a metal–insulator–semiconductor (MIS) structure are also intensively introduced. Metal/semiconductor contact engineering is investigated, and fabrication of Au‐free ohmic contact and graphene insertion layer to enhance the device performance is emphasized. Finally, the effects of field plates are studied through the use of simulated and fabricated devices.

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Breakdown-Voltage-Enhancement Technique for RF-Based AlGaN/GaN HEMTs With a Source-Connected Air-Bridge Field Plate

Cited by 78 publications

References 7 publications

Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs

Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs

Improved small‐signal hybrid parameter‐extraction technique for AlGaN / GaN high electron mobility transistors

Recent Advances in GaN‐Based Power HEMT Devices

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